Abstract: An electronic device includes a starting circuit configured to compare a value representative of the power supply voltage with a threshold, wherein the circuit includes a generator of a current proportional to temperature.

Abstract: An electronic device includes a starting circuit configured to compare a value representative of the power supply voltage with a threshold, wherein the circuit includes a generator of a current proportional to temperature.

Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.

Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances -between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.

Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.

Abstract: A power efficient startup circuit for activating a bandgap reference circuit is disclosed. The startup circuit uses a voltage supply having a voltage level to initiate the flow of a startup current used to activate the bandgap reference circuit. When the bandgap reference circuit starts, the startup circuit slowly charges a capacitor using the voltage supply when the startup current is flowing. The startup circuit disables quiescent current when the bandgap reference circuit is activated and a voltage of the capacitor exceeds a value equal to the difference between the voltage of the voltage supply when powered on and a voltage threshold of a switching device which disables the quiescent current. The capacitor is discharged when the voltage supply is turned off.

Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.

Abstract: A power efficient startup circuit for activating a bandgap reference circuit is disclosed. The startup circuit uses a voltage supply having a voltage level to initiate the flow of a startup current used to activate the bandgap reference circuit. When the bandgap reference circuit starts, the startup circuit slowly charges a capacitor using the voltage supply when the startup current is flowing. The startup circuit disables quiescent current when the bandgap reference circuit is activated and a voltage of the capacitor exceeds a value equal to the difference between the voltage of the voltage supply when powered on and a voltage threshold of a switching device which disables the quiescent current. The capacitor is discharged when the voltage supply is turned off.

Abstract: A power efficient startup circuit for activating a bandgap reference circuit is disclosed. The startup circuit uses a voltage supply having a voltage level to initiate the flow of a startup current used to activate the bandgap reference circuit. When the bandgap reference circuit starts, the startup circuit slowly charges a capacitor using the voltage supply when the startup current is flowing. The startup circuit disables quiescent current when the bandgap reference circuit is activated and a voltage of the capacitor exceeds a value equal to the difference between the voltage of the voltage supply when powered on and a voltage threshold of a switching device which disables the quiescent current. The capacitor is discharged when the voltage supply is turned off.