Abstract: Integrated substrate processing systems are disclosed that are able to achieve high-volume processing of substrates (e.g., greater than 120 substrates per hour) using environmentally sensitive processes and/or tools, such as photolithography processes and/or tools. In some embodiments, for example, the integrated substrate processing system may include an EFEM and a processing tool enclosure that are coupled together to form an integrated processing environment. The integrated substrate processing system may operate to maintain substantially uniform conditions (e.g., at a uniform temperature and relative humidity) throughout the integrated environment, and in some embodiments, may utilize an external air source, such as a remote air module (RAM), in order to do so. In some embodiments, high-volume processing of substrates may be further facilitated by employing specialized substrate handling robots and/or specially adapting the EFEM and/or processing tool enclosure.

Abstract: Exemplary semiconductor processing systems may include a first processing chamber and a second processing chamber. Each processing chamber may define a processing region and a transfer region having a slit valve. Each processing chamber may include a substrate support that is vertically translatable between the processing region and the transfer region. Each processing chamber may include a gas delivery assembly disposed above and in alignment with the substrate support. The first processing chamber and the second processing chamber may be at least substantially aligned along a first vertical axis. The systems may include a first transfer chamber coupled with the first processing chamber via the slit valve. The systems may include a second transfer chamber coupled with the second processing chamber via the slit valve. A transfer robot may be disposed within each transfer chamber. The transfer chambers may be at least substantially aligned along a second vertical axis.

Abstract: Embodiments include a method for processing thin substrates. Embodiments may include electrostatically bonding a substrate to a first electrostatic carrier (ESC), with a backside of the substrate is facing away from the first ESC. Thereafter, the substrate may be thinned to form a thinned substrate. The thinned substrate may then be transferred to a second ESC with a front side of the thinned substrate facing away from the second ESC. Embodiments may include cleaning the front side surface of the thinned substrate and transferring the thinned substrate to a third ESC. In an embodiment, a backside of the thinned substrate is facing away from the third ESC. Embodiments may also include processing the backside surface of the thinned substrate, and transferring the thinned substrate to a tape frame.

Abstract: Embodiments include a method for processing thin substrates. Embodiments may include electrostatically bonding a substrate to a first electrostatic carrier (ESC), with a backside of the substrate is facing away from the first ESC. Thereafter, the substrate may be thinned to form a thinned substrate. The thinned substrate may then be transferred to a second ESC with a front side of the thinned substrate facing away from the second ESC. Embodiments may include cleaning the front side surface of the thinned substrate and transferring the thinned substrate to a third ESC. In an embodiment, a backside of the thinned substrate is facing away from the third ESC. Embodiments may also include processing the backside surface of the thinned substrate, and transferring the thinned substrate to a tape frame.