Abstract: The subject invention provides Coriolus versicolor extracts, pharmaceutical compositions comprising the Coriolus versicolor extracts, methods of preparation, and therapeutic uses thereof. Advantageously, the subject Coriolus versicolor extract has immunomodulatory, anti-tumor, anti-microbial, and antiviral effects. In a preferred embodiment, the subject invention can be used to inhibit the metastatic spread of cancer cells. In certain preferred embodiments, the subject invention can be used to treat glioblastoma multiforme, nasopharyngeal carcinoma, breast carcinoma, lung carcinoma, prostate cancer, and colon carcinoma, as well as bacterial, viral, fungal, protozoan, and/or other microbial infection.

Abstract: The subject invention provides Coriolus versicolor extracts, pharmaceutical compositions comprising the Coriolus versicolor extracts, methods of preparation, and therapeutic uses thereof. Advantageously, the subject Coriolus versicolor extract has immunomodulatory, anti-tumor, anti-microbial, and antiviral effects. In a preferred embodiment, the subject invention can be used to inhibit the metastatic spread of cancer cells. In certain preferred embodiments, the subject invention can be used to treat glioblastoma multiforme, nasopharyngeal carcinoma, breast carcinoma, lung carcinoma, prostate cancer, and colon carcinoma, as well as bacterial, viral, fungal, protozoan, and/or other microbial infection.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.