Patents by Inventor Maureen Rosenberg BRONGO

Maureen Rosenberg BRONGO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10950635
    Abstract: A transistor device includes a plurality of drain fingers that are elongate in a first dimension, a plurality of source fingers that are elongate in the first dimension and interleaved with the plurality of drain fingers, one or more drain contact bars extending over a first set of the plurality of drain fingers and a first set of the plurality of source fingers in a second dimension that is orthogonal to the first dimension, and one or more source contact bars extending over a second set of the plurality of drain fingers and a second set of the plurality of source fingers in the second dimension.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: March 16, 2021
    Assignee: Skyworks Solutions, Inc.
    Inventors: Tzung-Yin Lee, Aniruddha B. Joshi, David Scott Whitefield, Maureen Rosenberg Brongo
  • Publication number: 20190074300
    Abstract: A transistor device includes a plurality of drain fingers that are elongate in a first dimension, a plurality of source fingers that are elongate in the first dimension and interleaved with the plurality of drain fingers, one or more drain contact bars extending over a first set of the plurality of drain fingers and a first set of the plurality of source fingers in a second dimension that is orthogonal to the first dimension, and one or more source contact bars extending over a second set of the plurality of drain fingers and a second set of the plurality of source fingers in the second dimension.
    Type: Application
    Filed: November 7, 2018
    Publication date: March 7, 2019
    Inventors: Tzung-Yin LEE, Aniruddha B. JOSHI, David Scott WHITEFIELD, Maureen Rosenberg BRONGO
  • Patent number: 10153306
    Abstract: A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: December 11, 2018
    Assignee: Skyworks Solutions, Inc.
    Inventors: Tzung-Yin Lee, Aniruddha B. Joshi, David Scott Whitefield, Maureen Rosenberg Brongo
  • Publication number: 20170250200
    Abstract: A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.
    Type: Application
    Filed: February 27, 2017
    Publication date: August 31, 2017
    Inventors: Tzung-Yin LEE, Aniruddha B. JOSHI, David Scott WHITEFIELD, Maureen Rosenberg BRONGO