Abstract: An electronics module assembly is described herein that packages dies using a universal cavity wafer that is independent of electronics module design. In one embodiment, the electronics module assembly can include a cavity wafer having a single frontside cavity that extends over a majority of a frontside surface area of the cavity wafer and a plurality of fillports. The assembly can also include at least one group of dies placed in the frontside cavity and encapsulant that secures the position of the at least one group of dies relative to the cavity wafer. Further, a layer of the encapsulant can cover a backside of the cavity wafer.

Abstract: An electronics module assembly is described herein that packages dies using a universal cavity wafer that is independent of electronics module design. In one embodiment, the electronics module assembly can include a cavity wafer having a single frontside cavity that extends over a majority of a frontside surface area of the cavity wafer and a plurality of fillports. The assembly can also include at least one group of dies placed in the frontside cavity and encapsulant that secures the position of the at least one group of dies relative to the cavity wafer. Further, a layer of the encapsulant can cover a backside of the cavity wafer.

Abstract: An electronics module assembly is described herein that packages dies using a universal cavity wafer that is independent of electronics module design. In one embodiment, the electronics module assembly can include a cavity wafer having a single frontside cavity that extends over a majority of a frontside surface area of the cavity wafer and a plurality of fillports. The assembly can also include at least one group of dies placed in the frontside cavity and encapsulant that secures the position of the at least one group of dies relative to the cavity wafer. Further, a layer of the encapsulant can cover a backside of the cavity wafer.

Abstract: Techniques for constructing an electronic module are provided herein. For example, the techniques include orienting at least one die having a top side (e.g., a first side), a bottom side (e.g., a second side) and one or more side walls, on a substrate with the top side of the die proximate the substrate, coating the bottom side and each of the side walls of the die with a stress buffer material, forming a reconstructed wafer by encapsulating the coated die within a mold compound, and removing the substrate to expose the top side of the die.

Abstract: An electronics module assembly is described herein that packages dies using a universal cavity wafer that is independent of electronics module design. In one embodiment, the electronics module assembly can include a cavity wafer having a single frontside cavity that extends over a majority of a frontside surface area of the cavity wafer and a plurality of fillports. The assembly can also include at least one group of dies placed in the frontside cavity and encapsulant that secures the position of the at least one group of dies relative to the cavity wafer. Further, a layer of the encapsulant can cover a backside of the cavity wafer.

Abstract: A method for interconnecting a die on a substrate of an electronic package. The method includes the steps of forming a plurality of free-end wire bonds on the die, wherein the free-end wire bonds are upstanding from the die, and encapsulating the free-end wire bonds in an encapsulation layer. Planarizing the encapsulation layer is performed so that the free-end wire bonds are exposed for electrical connection. Interconnecting the free-end wire bonds is provided by applying an interconnection layer on the encapsulation layer.

Abstract: A method for creating a high density electronic module including the steps of coupling a die to an interposer for form a chipset, mounting the chipset to a substrate, coupling a wafer to the substrate so that the chipset is within a window formed in the wafer, filling the window with encapsulant to encapsulate the chipset, removing the substrate to create a reconstructed wafer, and providing an interconnection structure on the interposer to form the high density electronic module.

Abstract: A method for interconnecting a die on a substrate of an electronic package. The method includes the steps of forming a plurality of free-end wire bonds on the die, wherein the free-end wire bonds are upstanding from the die, and encapsulating the free-end wire bonds in an encapsulation layer. Planarizing the encapsulation layer is performed so that the free-end wire bonds are exposed for electrical connection. Interconnecting the free-end wire bonds is provided by applying an interconnection layer on the encapsulation layer.

Abstract: A method for creating a high density electronic module including the steps of coupling a die to an interposer for form a chipset, mounting the chipset to a substrate, coupling a wafer to the substrate so that the chipset is within a window formed in the wafer, filling the window with encapsulant to encapsulate the chipset, removing the substrate to create a reconstructed wafer, and providing an interconnection structure on the interposer to form the high density electronic module.

Abstract: Techniques for constructing an electronic module are provided herein. For example, the techniques include orienting at least one die having a top side (e.g., a first side), a bottom side (e.g., a second side) and one or more side walls, on a substrate with the top side of the die proximate the substrate, coating the bottom side and each of the side walls of the die with a stress buffer material, forming a reconstructed wafer by encapsulating the coated die within a mold compound, and removing the substrate to expose the top side of the die.

Abstract: Aspects and examples include electrical components and methods of forming electrical components. In one example, a method includes selecting a substrate, forming a pattern of a first conductive material on a top surface of the substrate, forming a pattern of a second conductive material on a bottom surface of the substrate, dicing the substrate into one or more die having a first diced surface and a second diced surface, securing the first diced surface of each of the one or more die to a retaining material, encapsulating the one or more die in an encapsulent to form a reconstituted wafer, and forming a pattern of a third conductive material on the second diced surface by metalizing a surface of the reconstituted wafer.

Abstract: An optically transparent conductive material is disposed directly or indirectly on an inside surface of a cover material for static dissipation in an optical switching device. The optically transparent conductive material forms an electrically continuous film. The optically transparent conductive material can also be used for anti-reflection. An additional coating may be disposed directly or indirectly on an outside surface of the cover material.

Abstract: An optically transparent conductive material is disposed directly or indirectly on an inside surface of a cover material for static dissipation in an optical switching device. The optically transparent conductive material forms an electrically continuous film. The optically transparent conductive material can also be used for anti-reflection. An additional coating may be disposed directly or indirectly on an outside surface of the cover material.

Abstract: An optically transparent conductive material is used for static dissipation of a cover material for an optical switching device. The optically transparent conductive material is deposited directly or indirectly on the cover material. The optically transparent conductive material forms an electrically continuous film. The optically transparent conductive material can also be used for anti-reflection.

Abstract: A method of producing a MEMS device removes the bottom side of a device wafer after its movable structure is formed. To that end, the method provides the device wafer, which has an initial bottom side. Next, the method forms the movable structure on the device wafer, and then removes substantially the entire initial bottom side of the device wafer. Removal of the entire initial bottom side effectively forms a final bottom side.

Abstract: A packaged microchip has a microchip attach region with a lower modulus of elasticity than other portions of the package base. Specifically, the packaged microchip includes a stress sensitive microchip, and a package having a base with a primary region and an attach region. A surface of the microchip is coupled to the attach region of the package. The attach region has a modulus of elasticity that is less than the modulus of elasticity of the primary region.

Abstract: A MEMS inertial sensor is secured within a premolded-type package formed, at least in part, from a low moisture permeable molding material. Consequently, such a motion detector should be capable of being produced more economically than those using ceramic packages. To those ends, the package has at least one wall (having a low moisture permeability) extending from a leadframe to form a cavity, and an isolator (with a top surface) within the cavity. The MEMS inertial sensor has a movable structure suspended above a substrate having a bottom surface. The substrate bottom surface is secured to the isolator top surface at a contact area. In illustrative embodiments, the contact area is less than the surface area of the bottom surface of the substrate. Accordingly, the isolator forms a space between at least a portion of the bottom substrate surface and the package. This space thus is free of the isolator.

Abstract: A hermetically sealed wafer scale package for micro-electrical-mechanical systems devices. The package consists of a substrate wafer which contains a microstructure and a cap wafer which contains other circuitry and electrical connectors to connect to external applications. The wafers are bonded together, and the microstructure sealed, with a sealant, which in the preferred embodiment is frit glass. The wafers are electrically connected by a wire bond, which is protected by an overmold. Electrical connectors are applied to the cap wafer, which are electrically linked to the outputs and inputs of the microstructure. The final package is small, easy to manufacture and test, and more cost efficient than current hermetically sealed microstructure packages.

Abstract: An optically transparent conductive material is used for static dissipation of a cover material for an optical switching device. The optically transparent conductive material is deposited directly or indirectly on the cover material. The optically transparent conductive material forms an electrically continuous film. The optically transparent conductive material can also be used for anti-reflection.

Abstract: Optical mirror coatings are used for high-temperature diffusion barriers and mirror shaping. Certain materials for use as high-temperature diffusion barriers under optical mirror coatings include metals that have high melting and/or boiling points and amorphous and partially recrystallized inorganic amorphous materials that have high glass transition temperatures (Tg). Candidate metals are selected based upon the boiling point or a combination of melting point and boiling point. Candidate amorphous and partially recrystallized inorganic amorphous materials are selected based upon the glass transition temperature. Optical mirrors having such high-temperature diffusion barriers maintain reflectivity when exposed to elevated temperatures, and are particularly useful in optical Micro Electro-Mechanical Systems (MEMS) that are exposed to high-temperature manufacturing processes. Optical mirrors are shaped using tensile and/or compressive films.