Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Abstract: A method of forming surface protrusions on an article, and the article with the protrusions attached. The article may be an Integrated Circuit (IC) chip, a test probe for the IC chip or any suitable substrate or nanostructure. The surface protrusions are electroplated to a template or mold wafer, transferred to the article and easily separated from the template wafer. Thus, the attached protrusions may be, e.g., micro-bumps or micro pillars on an IC chip or substrate, test probes on a probe head, or one or more cantilevered membranes in a micro-machine or micro-sensor or other micro-electro-mechanical systems (MEMS) formed without undercutting the MEMS structure.

Abstract: A method of forming surface protrusions on an article, and the article with the protrusions attached. The article may be an Integrated Circuit (IC) chip, a test probe for the IC chip or any suitable substrate or nanostructure. The surface protrusions are electroplated to a template or mold wafer, transferred to the article and easily separated from the template wafer. Thus, the attached protrusions may be, e.g., micro-bumps or micro pillars on an IC chip or substrate, test probes on a probe head, or one or more cantilevered membranes in a micro-machine or micro-sensor or other micro-electro-mechanical systems (MEMS) formed without undercutting the MEMS structure.

Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Abstract: A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.

Abstract: A method of forming surface protrusions on an article, and the article with the protrusions attached. The article may be an Integrated Circuit (IC) chip, a test probe for the IC chip or any suitable substrate or nanostructure. The surface protrusions are electroplated to a template or mold wafer, transferred to the article and easily separated from the template wafer. Thus, the attached protrusions may be, e.g., micro-bumps or micro pillars on an IC chip or substrate, test probes on a probe head, or one or more cantilevered membranes in a micro-machine or micro-sensor or other micro-electro-mechanical systems (MEMS) formed without undercutting the MEMS structure.

Abstract: A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.

Abstract: A method of forming surface protrusions on an article, and the article with the protrusions attached. The article may be an Integrated Circuit (IC) chip, a test probe for the IC chip or any suitable substrate or nanostructure. The surface protrusions are electroplated to a template or mold wafer, transferred to the article and easily separated from the template wafer. Thus, the attached protrusions may be, e.g., micro-bumps or micro pillars on an IC chip or substrate, test probes on a probe head, or one or more cantilevered membranes in a micro-machine or micro-sensor or other micro-electro-mechanical systems (MEMS) formed without undercutting the MEMS structure.

Abstract: The present invention relates to a method for fabricating a thin layer made of a alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.

Abstract: A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.