Abstract: Some embodiments of the present invention relate to a semiconducting device that includes a base layer and a first layer mounted on an upper surface of the base layer. The first layer includes an upper surface and an opening such that a first die is attached to the upper surface of the base layer within the opening. A second die is attached to the upper surface of the first layer such that the second die is stacked above the first die. The semiconducting device may further include a second layer on the upper surface of the first layer. The second layer includes an opening and an upper surface such that the second die is within the opening in the second layer. In addition, a third die may be attached to the upper surface of the second layer such that the third die is stacked above the first and second dice.