Abstract: An integrated sensor includes a substrate made of a first semiconductor material having a first optical refractive index. The substrate includes a pixel array, wherein each pixel has a photosensitive active zone formed by an index contrast zone including a matrix of the first semiconductor material and a periodic structure embedded in the matrix. The periodic structure extends from the backside of the substrate and has a two-dimensional periodicity in a parallel plane with the backside. A value of the periodicity is linked with the wavelength of the optical signal and with the first refractive index. Elements of the periodic structure are formed of a second optically transparent material having a second refractive index less than the first refractive index. These elements are positioned at locations defined by the periodicity except for at one location defining a region, preferably central, that is devoid of a corresponding one of the elements.

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.