Abstract: In a method and device for etching a substrate by a plasma, the plasma is generated and accelerated at substantially sub-atmospheric pressure between a cathode and an anode of a plasma source (1) in a channel of system of at least one conductive cascaded plate between the cathode and anode. The plasma is released from the plasma source to a treatment chamber (2) in which the substrate (9) is exposed to the plasma. The treatment chamber is sustained at a reduced, near vacuum pressure during operation.

Abstract: The present invention describes a method for manufacturing a low dielectric constant coating, which coating comprises an inorganic and an organic component, wherein precursors for these components are activated in at least two plasma sources for plasma activated deposition of a chemical vapor phase and wherein said activated precursors are combined before they are deposited from the chemical vapor phase on the substrate to form the coating, characterized in that said inorganic component comprises porous nanoparticles. The invention also describes a device for the manufacture of a low dielectric constant coating.