Abstract: Substrate structure comprising a substrate (6) and a plasma grown layer (6a). The surface of the resulting substrate structure (7) is characterized by interrelated scaling components. The scaling components comprise a roughness exponent ?, a growth exponent ? and a dynamic exponent z, wherein the growth exponent ? has a value of less than 0.2 and the dynamic exponent z has a value of more than 6. Also disclosed is a method to provide such a substrate structure.

Abstract: A method and apparatus for manufacturing a multi-layer stack structure (12), the structure (12) comprising in order: a substrate (6a) a barrier layer (14) an adhesive layer (15) a barrier layer (14) a substrate (6b). The method comprises: a) providing two substrates (6a, 6b) in a single treatment space (5), the treatment space (5) comprising at least two electrodes (2, 3) for generating an atmospheric pressure glow discharge plasma in the treatment space (5); b) treating the facing surfaces of the two substrates (6a, 6b) simultaneously in the single treatment space (5); c) laminating the two treated substrates (6a, 6b) with an adhesive layer (15) in between the facing surfaces to obtain the multi-layer stack structure (12).

Abstract: Disclosed are methods for deposition of a chemical compound or element using an atmospheric pressure glow discharge plasma in a treatment space comprising two electrodes connected to a power supply for providing electrical power during an on-time (ton). The treatment space is filled with a gas composition of an active and an inert gas mixture, including a precursor of the chemical compound or element to be deposited. Dust formation is prevented by using Nitrogen in the gas composition, applying short pulses and using a predetermined residence time of the gas composition in the treatment space. Best results are obtained when using a stabilized plasma.

Abstract: Plasma treatment apparatus and method for producing a polymeric substrate using an atmospheric pressure glow discharge plasma in a treatment space formed between two or more opposing electrodes connected to a power supply using a gas composition in the treatment space comprising a precursor and oxygen. A first layer of inorganic material is deposited on a polymeric substrate with a largest thickness (d3) of at least 100% of an Rt-value being defined as the maximum peak to valley height of the profile of the polymeric substrate measured substantially perpendicular to the surface of the polymeric substrate. A second layer of inorganic material is deposited on the first layer, wherein in the treatment space the oxygen has a concentration of 3% or higher, and the power supply is controlled to provide an energy across a gap between the two or more opposing electrodes of 40 J/cm2 or higher.

Abstract: fcPlasma treatment apparatus for treating a substrate (6) comprising at least two opposing electrodes (2, 3) and a treatment space (5). The at least two electrodes (2, 3) are connected to a plasma control unit (4) for generating an atmospheric pressure glow discharge plasma in the treatment space (5). A gas supply device (8) provides a gas mixture in the treatment space (5). In operation, a first layer of inorganic material is deposited on a polymeric substrate using a gas composition comprising oxygen having a concentration of 2% or less, while the power supply provides an energy of 30 J/cm2 or less. A second layer of inorganic material is deposited on the first layer using a gas composition comprising oxygen having a concentration of 3% or higher. During the second layer formation the power supply provides an energy of 40 J/cm2 or higher.

Abstract: The present invention relates to a method of and arrangement for removing contaminants from a surface of a substrate by subjecting said substrate surface to an atmospheric pressure glow plasma. Said plasma is generated in a discharge space comprising a plurality of electrodes, by applying an alternating plasma energizing voltage to said electrodes causing a plasma current and a displacement current. Said plasma is stabilised by controlling said displacement current during plasma generation such that modification of properties of said substrate surface is prevented.

Abstract: A method and apparatus for manufacturing a multi-layer stack structure (12), the structure (12) comprising in order: a substrate (6a) a barrier layer (14) an adhesive layer (15) a barrier layer (14) a substrate (6b). The method comprises: a) providing two substrates (6a, 6b) in a single treatment space (5), the treatment space (5) comprising at least two electrodes (2, 3) for generating an atmospheric pressure glow discharge plasma in the treatment space (5); b) treating the facing surfaces of the two substrates (6a, 6b) simultaneously in the single treatment space (5); c) laminating the two treated substrates (6a, 6b) with an adhesive layer (15) in between the facing surfaces to obtain the multi-layer stack structure (12).

Abstract: Method and apparatus for generating and sustaining a glow discharge plasma in a plasma discharge space comprising at least two spaced electrodes. The method and apparatus are arranged for performing the steps of introducing in the discharge space a gas or gas mixture under atmospheric pressure conditions, energizing the electrodes by applying an AC energizing voltage (Va) to the electrodes, and controlling the energizing voltage (Va) such that at plasma generation a sharp relative decrease of displacement current is provided.

Abstract: Apparatus and method for atomic layer deposition on a surface of a substrate (6) in a treatment space. A gas supply device (15, 16) is present for providing various gas mixtures to the treatment space. The gas supply device (15, 16) is arranged to provide a gas mixture with a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate. Subsequently, a gas mixture comprising a reactive agent capable to convert the attached precursor molecules to active precursor sites is provided. A plasma generator (10) is present for generating an atmospheric pressure plasma in the gas mixture comprising the reactive agent.

Abstract: Method and plasma generating apparatus for generating an atmospheric pressure glow discharge plasma in a treatment space (5) filled with a gas composition. Two electrodes (2, 3) are connected to a power supply (4) for providing electrical power during an on-time (ton). The power supply (4) is arranged to provide a periodic signal with an on-time (ton) which is shorter than a predetermined time period, the predetermined time period corresponding substantially to the time necessary for a dust coagulation center from the gas composition to become a cluster in the treatment space (5). This method and apparatus may be used for depositing a layer of material on a substrate (6) in the treatment space (5).

Abstract: A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one SiOx layer is realized on said part of the substrate surface by: —placing the substrate (1) in a process chamber (5); —maintaining the pressure in the process chamber (5) at a relatively low value; —maintaining the substrate (1) at a specific substrate treatment temperature; —generating a plasma (P) by means of at least one plasma source (3) mounted on the process chamber (5) at a specific distance (L) from the substrate surface; —contacting at least a part of the plasma (P) generated by each source (3) with the said part of the substrate surface; and —supplying at least one precursor suitable for SiOx realization to the said part of the plasma (P); wherein at least the at least one layer realized on the substrate (1) in subjected to a temperature treatment in a gas environment.

Abstract: The present invention provides an arrangement and method for generating a uniform and stable plasma. The arrangement comprises a discharge space (7) between at least a pair of electrodes (1, 2), which electrodes (1, 2) are arranged for providing an electric field and for generating a plasma in the electric field. At least one of the electrodes (1) has a boundary surface (6) with the discharge space (7). The boundary surface is comprised of one or more alternately arranged conductive (4) and insulating regions (5). The invention further relates to an electrode (1) for use in the arrangement described. The invention may, for example, be used in dielectric barrier discharge configurations, or in arrangements for generating plasmas at atmospheric pressures, or for generating plasmas at low temperatures, such as generating atmospheric pressure glow plasmas (APG) for material processing or surface (3) treatment purposes.

Abstract: Device (10) for converting electromagnetic radiation energy into electrical energy, comprising at least a photovoltaic element (11) with a radiation-sensitive surface, wherein a covering layer (12) of a material comprising a silicon compound, to which a rare earth element has been added, is present on said radiation-sensitive surface, characterized in that the material of the covering layer comprises a compound of silicon and nitrogen. Good results were obtained with a compound such as Sr2Si5N8:Eu.

Abstract: Method and arrangement (1) for generating an atmospheric pressure glow plasma APG (7), where in a plurality of electrodes, (4, 5) are arranged defining a discharge space (10) for forming said plasma (7). The electrodes (4,5) are connected to a power supply (8) providing an AC-voltage having a frequency of at least 50 kHz to the electrodes (4,5). A gaseous substance (6) is provided in said discharge space and comprises t least one of a group of argon, nitrogen and air.

Abstract: Method and arrangement for controlling a discharge plasma in a discharge space (11) having at least two spaced electrodes (13, 14). A gas or gas mixture is introduced in the discharge space (11), and a power supply (15) for energizing the electrodes (13, 14) is provided for applying an AC plasma energizing voltage to the electrodes (13, 14). At least one current pulse is generated and causes a plasma current and a displacement current. Means for controlling the plasma are provided and arranged to apply a displacement current rate of change for controlling local current density variations associated with a plasma variety having a low ratio of dynamic to static resistance, such as filamentary discharges. By damping such fast variations using a pulse forming circuit (20), a uniform glow discharge plasma is obtained.

Abstract: The present invention relates to a method of and arrangement for removing contaminants from a surface of a substrate by subjecting said substrate surface to an atmospheric pressure glow plasma. Said plasma is generated in a discharge space comprising a plurality of electrodes, by applying an alternating plasma energizing voltage to said electrodes causing a plasma current and a displacement current. Said plasma is stabilised by controlling said displacement current during plasma generation such that modification of properties of said substrate surface is prevented.

Abstract: The present invention is directed to a method and arrangement for controlling a glow discharge plasma in a gas or gas mixture under atmospheric conditions, in a plasma discharge space comprising at least two spaced electrodes in which at least one plasma pulse having an absolute pulse maximum is generated by applying an AC plasma energizing voltage to the electrodes causing a plasma current and a displacement current. The plasma is controlled by providing a relative decrease of the displacement current after the pulse maximum. In a preferred embodiment, the energizing voltage is applied through a series circuit including a choke coil and a non-saturable inductor.

Abstract: Method for generating an atmospheric pressure glow plasma (APG), wherein said plasma is generated in a discharge space between a plurality of electrodes. A dielectric is present on at least one of said electrodes, said dielectric having a boundary surface with said plasma enabling interactions between said plasma and said surface. Said dielectric is arranged for releasing electrons contributing to said plasma from said surface by said interactions.

Abstract: In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.

Abstract: Method and arrangement (1) for generating an atmospheric pressure glow plasma APG (7), where in a plurality of electrodes, (4, 5) are arranged defining a discharge space (10) for forming said plasma (7). The electrodes (4,5) are connected to a power supply (8) providing an AC-voltage having a frequency of at least 50 kHz to the electrodes (4,5). A gaseous substance (6) is provided in said discharge space and comprises t least one of a group of argon, nitrogen and air.