Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes two reference gratings provided in the substrate and two measurement gratings on top of the reference gratings, the measurement gratings being similar to the reference gratings, and oppositely biased in a single direction relative to the respective reference gratings. An overlay measurement device with an image sensor is used for obtaining pixel data of a measurement spot in each of the two measurement gratings. Asymmetry for each pixel in the measurement spot is measured, and from the pixel asymmetry measurements in associated pixels of each of the two measurement gratings an overlay value and a process dependent value is determined, as well as a quality indicator for the overlay value and the process dependent value.

Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.

Abstract: An alignment tool for a lithographic apparatus illuminates an alignment mark on a substrate with an alignment beam and measures the reflected spectrum. The reflected spectrum is compared with a reference mark to determine any misalignment. A blazed sub-wavelength grating is used to deflect the sub-beams created by diffracting the alignment beam from the alignment mark onto the reference mark.

Abstract: A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; and in a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.

Abstract: A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process.

Abstract: A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process. Also, the method may be repeated to create arrays at even higher densities.

Abstract: An apparatus and method for improved latent overlay metrology is disclosed. In an embodiment, a scatterometer and an overexposed overlay target are used to obtain more robust overlay measurement.

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

Abstract: A method according to one embodiment of the invention relates to determining at least one parameter of a model that provides information about a position of an object. The object has a plurality of alignment marks of which desired positions are known. The method includes measuring a plurality of positional parameters for each alignment mark. Based on the measured plurality of positional parameters, which are weighted with weighing coefficients, at least one parameter of the model of the object is determined. The numerical value of each weighing coefficient is determined together with the at least one parameter of the model.