Patents by Inventor Maurizio Boscardin

Maurizio Boscardin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Particle detector capable of separating in-time signals from out-of-time signals
    Patent number: 10811555
    Abstract: Silicon Particle Detector, comprising an absorption region (10) capable of generating electrical charges in response to a particle passing therethrough, a first and a second electrode (20, 30) arranged on opposite sides of the absorption region (10), wherein the first electrode (20) is segmented into a plurality of pads (20a), and a plurality of multiplication layers (40) able to avalanche-multiply the electric charges generated in the absorption region (10), each of the multiplication layers (40) being arranged beneath a respective pad (20a) and interposed between it and the absorption region (10), each multiplication layer (40) is surrounded by a respective protection ring (50) formed by the material of the pad (20a). The protection ring (50) is laterally interposed between the multiplication layer (40) and the absorption region (10).
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: October 20, 2020
    Assignee: Istituto Nazionale di Fisica Nucleare
    Inventors: Nicolò Cartiglia, Gian Franco Dalla Betta, Lucio Pancheri, Maurizio Boscardin, Giovanni Paternoster
  • PARTICLE DETECTOR CAPABLE OF SEPARATING IN-TIME SIGNALS FROM OUT-OF-TIME SIGNALS
    Publication number: 20190198704
    Abstract: Silicon Particle Detector, comprising an absorption region (10) capable of generating electrical charges in response to a particle passing therethrough, a first and a second electrode (20, 30) arranged on opposite sides of the absorption region (10), wherein the first electrode (20) is segmented into a plurality of pads (20a), and a plurality of multiplication layers (40) able to avalanche-multiply the electric charges generated in the absorption region (10), each of the multiplication layers (40) being arranged beneath a respective pad (20a) and interposed between it and the absorption region (10), each multiplication layer (40) is surrounded by a respective protection ring (50) formed by the material of the pad (20a). The protection ring (50) is laterally interposed between the multiplication layer (40) and the absorption region (10).
    Type: Application
    Filed: September 12, 2017
    Publication date: June 27, 2019
    Inventors: Nicolò CARTIGLIA, Gian Franco DALLA BETTA, Lucio PANCHERI, Maurizio BOSCARDIN, Giovanni PATERNOSTER
  • Semiconductor detector, radiation detector and radiation detection apparatus
    Patent number: 10094939
    Abstract: A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: October 9, 2018
    Assignees: FONDAZIONE BRUNO KESSLER, HORIBA, LTD.
    Inventors: Antonino Picciotto, Pierluigi Bellutti, Maurizio Boscardin, Nicola Zorzi, Daisuke Matsunaga
  • SEMICONDUCTOR DETECTOR, RADIATION DETECTOR AND RADIATION DETECTION APPARATUS
    Publication number: 20170184734
    Abstract: A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.
    Type: Application
    Filed: December 22, 2016
    Publication date: June 29, 2017
    Inventors: Antonino Picciotto, Pierluigi Bellutti, Maurizio Boscardin, Nicola Zorzi, Daisuke Matsunaga