Abstract: The present invention relates to a semiconductor optoelectronic device (10) comprising a junction (12) consisting a stack of layers defining an N-doped region, an intermediate region and a P-doped region, at least one layer, called a modulated layer, of the N-doped region and/or of the P-doped region and/or of the intermediate region, being formed of a plurality of stacks of sub-layers, each sub-layer differing from the other sub-layers of the same stack by a feature of the material of the sub-layer, called a distinctive feature, the thicknesses and distinctive features of the sub-layers being chosen so as to reduce the absorption of photons in the corresponding region compared with a semiconductor optoelectronic device, known as a reference device, the only difference being that each modulated layer is replaced by an unmodulated layer of the same thickness as the modulated layer and with identical features except for the distinctive feature.

Abstract: An optical device including a laser with a laser cavity having a gain curve with a maximum at a wavelength ?max; and an optical carrier coupled to the cavity. The optical carrier includes a grating that defines a reflection peak coefficient at a wavelength ? that is less than the wavelength ?max by at least 10 nanometers at ambient temperature.

Abstract: The present invention provides a vertical structure semiconductor laser comprising bottom and top cladding layers (1, 2), a light guide (G) superposed on the bottom cladding layer, and a semiconductor active layer (CA). In the invention, the light guide (G) further comprises: a semiconductor bottom guide layer (11) having the following two adjacent bottom parts: an undoped first bottom part (11a) adjacent the central region, and an n-type doped second bottom part (11b) adjacent the bottom cladding layer, a semiconductor top guide layer (12) having the following two adjacent top parts: an undoped first top part (12a) adjacent the central region, and a p-type doped second top part (12b) adjacent the top cladding layer. The first bottom and top parts form a non-doped region (ND) more than 0.5 &mgr;m thick, and the refractive index difference (&Dgr;nopt) between one or each of the cladding layers and the adjacent guide layer is less than 0.02.

Abstract: The present invention provides a vertical structure semiconductor laser comprising bottom and top cladding layers (1, 2), a light guide (G) superposed on the bottom cladding layer, and a semiconductor active layer (CA).

Abstract: The invention relates to an optical amplifier (3) in which a source beam (1) and a pumping beam (2) are coupled.