Abstract: An integrated circuit structure includes a sub-fin having a first type of dopant, a first diffusion region having the first type of dopant and in contact with the sub-fin, and a second diffusion region and a third diffusion region having a second type of dopant and in contact with the sub-fin. The first type of dopant is one of p-type or n-type dopant, and where the second type of dopant is the other of the p-type or n-type dopant. A first body of semiconductor material extends from the second diffusion region to the third diffusion region, and a second body of semiconductor material extends from the first diffusion region towards the second diffusion region. The first diffusion region is a tap diffusion region contacting the sub-fin. In an example, the first diffusion region facilitates formation of a diode for electrostatic discharge (ESD) protection of the integrated circuit structure.