Abstract: A dome valve selectively dispenses a silicon product from a chamber of a vessel. The dome valve comprises a valve body defining a pass-through channel in communication with the chamber of the vessel to allow the silicon product to exit the vessel. The dome valve also comprising a valve seat defining an opening through which the silicon product enters the pass-through channel. The dome valve further comprising a domed body having a semi-hemispherical configuration. The domed body has a sealing surface. The domed body is rotatable between a closed position and an open position for allowing the selective dispensing of the silicon product from the vessel.

Abstract: An electrode for use with a manufacturing apparatus to deposit a material onto a carrier body and to circulate a coolant through said electrode. The electrode includes a shaft having a first end and a second end spaced from each other. Also included is a head disposed on said second end of said shaft. Further included is a channel defined by an interior surface of said shaft, the channel extending from the first end to a terminal end, wherein the terminal end comprises a non-planar geometry, the channel configured to route the coolant therethrough. Yet further included is a channel coating disposed on said interior surface for maintaining thermal conductivity between said electrode and the coolant, wherein said head has an exterior surface and a head coating is disposed on said exterior surface of said head.

Abstract: A dome valve selectively dispenses a silicon product from a chamber of a vessel. The dome valve comprises a valve body defining a pass-through channel in communication with the chamber of the vessel to allow the silicon product to exit the vessel. The dome valve also comprising a valve seat defining an opening through which the silicon product enters the pass-through channel. The dome valve further comprising a domed body having a semi-hemispherical configuration. The domed body has a sealing surface. The domed body is rotatable between a closed position and an open position for allowing the selective dispensing of the silicon product from the vessel.

Abstract: A method of controlling the crystallinity of a silicon powder may include heating a reactor to a temperature of no more than 650° C., and flowing a feed gas comprising silane and a carrier gas into the reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon. According to another embodiment, a method of controlling the crystallinity of a silicon powder may include flowing a feed gas comprising silane and a carrier gas into a heated reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2, and maintaining an internal reactor pressure of about 2 atm or less during the flowing of the feed gas into the heated reactor. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.

Abstract: An electrode composition comprises a silicon powder comprising non-crystalline and crystalline silicon, where the crystalline silicon is present in the silicon powder at a concentration of no more than about 20 wt. %. An electrode for an electrochemical cell comprises an electrochemically active material comprising non-crystalline silicon and crystalline silicon, where the non-crystalline silicon and the crystalline silicon are present prior to cycling of the electrode. A method of controlling the crystallinity of a silicon powder includes heating a reactor to a temperature of no more than 650° C. and flowing a feed gas comprising silane and a carrier gas into the reactor while maintaining an internal reactor pressure of about 2 atm or less. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.

Abstract: A method inhibits formation of deposits on a cooling surface of an electrode. The electrode is used in a manufacturing system that deposits a material on a carrier body. The cooling surface comprises copper. The system includes a reactor defining a chamber. The electrode is at least partially disposed within the chamber and supports the carrier body. A circulation system, in fluid communication with the electrode, transports a coolant composition to and from the cooling surface. The coolant composition comprises a coolant and dissolved copper from the cooling surface. A filtration system is in fluid communication with the circulation system. The method heats the electrode. The cooling surface of the electrode is contacted with the coolant composition. The material is deposited on the carrier body, and the coolant composition is filtered with the filtration system to remove at least a portion of the dissolved copper therefrom.

Abstract: The present invention relates to a manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each of the end of the carrier body. The apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing for receiving the socket. The electrode includes an interior surface that defines a channel. The electrode heats the carrier body to a necessary deposition temperature by direct passage of electrical current to the carrier body. A coolant is in fluid communication with the channel of the electrode for reducing the temperature of the electrode. A channel coating is disposed in the interior surface of the electrode for preventing loss of heat transfer between the coolant and the interior surface.