Patents by Inventor Max F. Hinerman

Max F. Hinerman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of removing etch residues
    Patent number: 7022612
    Abstract: Organic etch residues are often left within vias formed by etching through resist masks. Since the etch is designed to expose an underlying metal layer and is directional in order to produce vertical via sidewalls, the residue often incorporates metal. The present invention discloses a method of removing such etch residues while passivating exposed metal, including exposing the residue to ammonia. In the disclosed embodiment, ammonia and oxygen are mixed in a plasma step, such that the resist can be burned off at the same time as the residue treatment. The residue can thus be easily rinsed away.
    Type: Grant
    Filed: July 24, 2003
    Date of Patent: April 4, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Larry Hillyer, Max F. Hinerman
  • Method of removing etch residues
    Patent number: 6613681
    Abstract: Organic etch residues are often left within vias formed by etching through resist masks. Since the etch is designed to expose an underlying metal layer and is directional in order to produce vertical via sidewalls, the residue often incorporates metal. The present invention discloses a method of removing such etch residues while passivating exposed metal, including exposing the residue to ammonia. In the disclosed embodiment, ammonia and oxygen are mixed in a plasma step, such that the resist can be burned off at the same time as the residue treatment. The residue can thus be easily rinsed away.
    Type: Grant
    Filed: August 28, 1998
    Date of Patent: September 2, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Larry Hillyer, Max F. Hinerman