Patents by Inventor Max G. Levy
Max G. Levy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10224225Abstract: An apparatus and an associated method. The apparatus includes a chuck, an array of three or more ultrasonic sensors, a ceramic ring surrounding the chuck, and a controller connected to the ultrasonic sensors. The chuck is configured to removeably hold a substrate for processing. Each ultrasonic sensor may send a respective ultrasonic sound wave to a respective preselected peripheral region of the substrate and receive a respective return ultrasonic sound wave from the preselected peripheral region. The controller may compare a measured position of the substrate on the chuck to a specified placement of the substrate on the chuck based on a measured elapsed time between sending the ultrasonic sound wave and receiving the return ultrasonic sound wave for each ultrasonic sensor. The method compares a measured position of the substrate on the chuck to a specified position on the chuck.Type: GrantFiled: April 19, 2018Date of Patent: March 5, 2019Assignee: International Business Machines CorporationInventors: Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max G. Levy, Max L. Lifson, Matthew D. Moon, Timothy D. Sullivan
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Publication number: 20180240694Abstract: An apparatus and an associated method. The apparatus includes a chuck, an array of three or more ultrasonic sensors, a ceramic ring surrounding the chuck, and a controller connected to the ultrasonic sensors. The chuck is configured to removeably hold a substrate for processing. Each ultrasonic sensor may send a respective ultrasonic sound wave to a respective preselected peripheral region of the substrate and receive a respective return ultrasonic sound wave from the preselected peripheral region. The controller may compare a measured position of the substrate on the chuck to a specified placement of the substrate on the chuck based on a measured elapsed time between sending the ultrasonic sound wave and receiving the return ultrasonic sound wave for each ultrasonic sensor. The method compares a measured position of the substrate on the chuck to a specified position on the chuck.Type: ApplicationFiled: April 19, 2018Publication date: August 23, 2018Inventors: Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max G. Levy, Max L. Lifson, Matthew D. Moon, Timothy D. Sullivan
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Patent number: 10050115Abstract: Approaches for LDMOS devices are provided. A method of forming a semiconductor structure includes forming a gate dielectric including a first portion having a first uniform thickness, a second portion having a second uniform thickness different than the first uniform thickness, and a transition portion having tapered surface extending from the first portion to the second portion. The gate dielectric is formed on a planar upper surface of a substrate. The tapered surface is at an acute angle relative to the upper surface of the substrate.Type: GrantFiled: December 30, 2014Date of Patent: August 14, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Brennan J. Brown, Natalie B. Feilchenfeld, Max G. Levy, Santosh Sharma, Yun Shi, Michael J. Zierak
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Patent number: 9997385Abstract: An apparatus and an associated method. The apparatus includes a chuck in a process chamber, an array of three or more ultrasonic sensors in the process chamber, a ceramic ring surrounding the chuck, and a controller connected to the ultrasonic sensors. The chuck is configured to removeably hold a substrate for processing. Each ultrasonic sensor may send a respective ultrasonic sound wave to a respective preselected peripheral region of the substrate and receive a respective return ultrasonic sound wave from the preselected peripheral region. The controller may compare a measured position of the substrate on the chuck to a specified placement of the substrate on the chuck based on a measured elapsed time between sending the ultrasonic sound wave and receiving the return ultrasonic sound wave for each ultrasonic sensor. The method compares a measured position of the substrate on the chuck to a specified position on the chuck.Type: GrantFiled: April 18, 2017Date of Patent: June 12, 2018Assignee: International Business Machines CorporationInventors: Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max G. Levy, Max L. Lifson, Matthew D. Moon, Timothy D. Sullivan
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Patent number: 9893157Abstract: Structures that include contact trenches and isolation trenches, as well as methods for forming structures including contact trenches and isolation trenches. A contact trench is formed that extends through a device layer of a silicon-on-insulator (SOI) substrate to a buried oxide layer of the SOI substrate. An isolation trench is formed that extends through the device layer to the buried oxide layer. An electrical insulator is deposited that fills the contact trench and the first isolation trench. The electrical insulator is removed from the contact trench. After the electrical insulator is removed from the contact trench, an electrical conductor is formed in the contact trench. The electrical contact may be coupled with a doped region in a handle wafer of the SOI substrate.Type: GrantFiled: January 9, 2017Date of Patent: February 13, 2018Assignee: GLOBALFOUNDRIES Inc.Inventors: Natalie B. Feilchenfeld, Michael J. Zierak, Max G. Levy, BethAnn Lawrence
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Patent number: 9825119Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.Type: GrantFiled: August 2, 2016Date of Patent: November 21, 2017Assignee: International Business Machines CorporationInventors: Max G. Levy, Gary L. Milo, David C. Thomas
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Patent number: 9825120Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.Type: GrantFiled: August 2, 2016Date of Patent: November 21, 2017Assignee: International Business Machines CorporationInventors: Max G. Levy, Gary L. Milo, David C. Thomas
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Publication number: 20170221742Abstract: An apparatus and an associated method. The apparatus includes a chuck in a process chamber, an array of three or more ultrasonic sensors in the process chary a ceramic ring surrounding the chuck, and a controller connected to the ultrasonic sensors. The chuck is configured to removeably hold a substrate for processing. Each ultrasonic sensor may send a respective ultrasonic sound wave to a respective preselected peripheral region of the substrate and receive a respective return ultrasonic sound wave from the preselected peripheral region. The controller may compare a measured position of the substrate on the chuck to a specified placement of the substrate on the chuck based on a measured elapsed time between sending the ultrasonic sound wave and receiving the return ultrasonic sound wave for each ultrasonic sensor. The method compares a measured position of the substrate on the chuck to a specified position on the chuck.Type: ApplicationFiled: April 18, 2017Publication date: August 3, 2017Inventors: Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max G. Levy, Max L. Lifson, Matthew D. Moon, Timothy D. Sullivan
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Patent number: 9685362Abstract: An apparatus and method for centering substrates determining on a chuck. The apparatus includes a chuck in a process chamber, the chuck configured to removeably hold a substrate for processing; an array of two or more ultrasonic sensors arranged in the process chamber, each ultrasonic sensor arranged relative to the chuck so as to send a respective ultrasonic sound wave to a respective preselected region of the substrate and receive a respective return ultrasonic sound wave from the preselected region of the substrate; and a controller connected to each ultrasonic sensor and configured to compare a measured position of the substrate on the chuck to a specified placement of the substrate on the chuck based on a measured elapsed time between sending the ultrasonic sound wave and receiving the return ultrasonic sound wave from each ultrasonic sensor.Type: GrantFiled: February 19, 2014Date of Patent: June 20, 2017Assignee: International Business Machines CorporationInventors: Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max G. Levy, Max L. Lifson, Matthew D. Moon, Timothy D. Sullivan
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Patent number: 9595579Abstract: Various embodiments include structures for field effect transistors (FETs). In various embodiments, a structure for a FET includes: a deep n-type well; a shallow n-type well within the deep n-type well; and a shallow trench isolation (STI) region within the shallow n-type well, the STI region including: a first section having a first depth within the shallow n-type well as measured from an upper surface of the shallow n-type well, and a second section contacting and overlying the first section, the second section having a second depth within the shallow n-type well as measured from the upper surface of the shallow n-type well.Type: GrantFiled: May 14, 2015Date of Patent: March 14, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Natalie B. Feilchenfeld, Max G. Levy, Richard A. Phelps, Santosh Sharma, Yun Shi, Michael J. Zierak
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Patent number: 9548349Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.Type: GrantFiled: June 25, 2014Date of Patent: January 17, 2017Assignee: International Business Machines CorporationInventors: Max G. Levy, Gary L. Milo, David C. Thomas
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Patent number: 9508578Abstract: An apparatus and method for leak detection of coolant gas from a chuck. The apparatus includes a chuck having a top surface and configured to clamp a substrate to the top surface, the chuck having one or more recessed regions in the top surface, the recessed regions configured to allow a cooling gas to contact a backside of the substrate; a cooling gas inlet and a cooling gas outlet connected to the one or more recessed regions; a first measurement device connected to the cooling gas inlet and configured to measure a first amount of cooling gas entering the cooling gas inlet and a second measurement device connected to the cooling gas outlet and configured to measure a second amount of cooling gas exiting from the cooling gas outlet; and a controller configured to determine a difference between the first amount of cooling gas and the second amount of cooling gas.Type: GrantFiled: February 4, 2014Date of Patent: November 29, 2016Assignee: GLOBALFOUNDRIES Inc.Inventors: Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max G. Levy, Max L. Lifson, Jed H. Rankin, Timothy D. Sullivan
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Publication number: 20160343797Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.Type: ApplicationFiled: August 2, 2016Publication date: November 24, 2016Inventors: Max G. Levy, Gary L. Milo, David C. Thomas
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Publication number: 20160343798Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.Type: ApplicationFiled: August 2, 2016Publication date: November 24, 2016Inventors: Max G. Levy, Gary L. Milo, David C. Thomas
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Patent number: 9484301Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.Type: GrantFiled: May 21, 2015Date of Patent: November 1, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Max G. Levy, Gary L. Milo, Matthew D. Moon, Anthony C. Speranza, Timothy D. Sullivan, David C. Thomas, Steven S. Williams
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Publication number: 20160190269Abstract: Approaches for LDMOS devices are provided. A method of forming a semiconductor structure includes forming a gate dielectric including a first portion having a first uniform thickness, a second portion having a second uniform thickness different than the first uniform thickness, and a transition portion having tapered surface extending from the first portion to the second portion. The gate dielectric is formed on a planar upper surface of a substrate. The tapered surface is at an acute angle relative to the upper surface of the substrate.Type: ApplicationFiled: December 30, 2014Publication date: June 30, 2016Inventors: Brennan J. Brown, Natalie B. Feilchenfeld, Max G. Levy, Santosh Sharma, Yun Shi, Michael J. Zierak
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Patent number: 9337310Abstract: Low leakage, high frequency devices and methods of manufacture are disclosed. The method of forming a device includes implanting a lateral diffusion drain implant in a substrate by a blanket implantation process. The method further includes forming a self-aligned tapered gate structure on the lateral diffusion drain implant. The method further includes forming a halo implant in the lateral diffusion drain implant, adjacent to the self-aligned tapered gate structure and at least partially under a source region of the self-aligned tapered gate structure.Type: GrantFiled: May 5, 2014Date of Patent: May 10, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Theodore J. Letavic, Max G. Levy, Santosh Sharma, Yun Shi
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Publication number: 20150380478Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.Type: ApplicationFiled: June 25, 2014Publication date: December 31, 2015Inventors: Max G. Levy, Gary L. Milo, David C. Thomas
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Publication number: 20150318378Abstract: Low leakage, high frequency devices and methods of manufacture are disclosed. The method of forming a device includes implanting a lateral diffusion drain implant in a substrate by a blanket implantation process. The method further includes forming a self-aligned tapered gate structure on the lateral diffusion drain implant. The method further includes forming a halo implant in the lateral diffusion drain implant, adjacent to the self-aligned tapered gate structure and at least partially under a source region of the self-aligned tapered gate structure.Type: ApplicationFiled: May 5, 2014Publication date: November 5, 2015Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Theodore J. LETAVIC, Max G. LEVY, Santosh SHARMA, Yun SHI
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Publication number: 20150255395Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.Type: ApplicationFiled: May 21, 2015Publication date: September 10, 2015Inventors: Max G. Levy, Gary L. Milo, Matthew D. Moon, Anthony C. Speranza, Timothy D. Sullivan, David C. Thomas, Steven S. Williams