Patents by Inventor Max Lemme

Max Lemme has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTODETECTOR WITH ENHANCED ULTRAVIOLET LIGHT SENSITIVITY
    Publication number: 20250185385
    Abstract: A photodetector and method of making the same including a semiconductor and a 2D material. The space charge region is located directly at the surface of the semiconductor. A photon with a small wavelength, once it enters the semiconductor, is immediately inside the space charge region in which an electron-hole pair generated by the photon can contribute to a photocurrent. This makes the photodetector an efficient UV detector. Interdigitated oxide structures between the semiconductor and the 2D material further enhance the sensitivity of the photodetector to, for example, UV light.
    Type: Application
    Filed: December 4, 2023
    Publication date: June 5, 2025
    Applicant: Vishay Semiconductor GmbH
    Inventors: Ardeshir ESTEKI, Christoph GEBAUER, Heinrich GOTTLOB, Max LEMME
  • P-type graphene base transistor
    Patent number: 8957404
    Abstract: A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: February 17, 2015
    Assignee: IHP GmbH—Innovations for High Performance Microelectronics
    Inventors: Wolfgang Mehr, Jaroslaw Dabrowski, Max Lemme, Gunther Lippert, Grzegorz Lupina, Johann Christoph Scheytt
  • P-TYPE GRAPHENE BASE TRANSISTOR
    Publication number: 20140027715
    Abstract: A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.
    Type: Application
    Filed: December 20, 2012
    Publication date: January 30, 2014
    Applicant: IHP GmbH - Innovations for High Performance Microelectronics
    Inventors: Wolfgang Mehr, Jaroslaw Dabrowski, Max Lemme, Gunther Lippert, Grzegorz Lupina, Johann Christoph Scheytt