Patents by Inventor Max Samuel Aubain

Max Samuel Aubain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RF switch having independently generated gate and body voltages
    Patent number: 11539360
    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: December 27, 2022
    Assignee: QUALCOMM Incorporated
    Inventors: Max Samuel Aubain, Clint Kemerling
  • RF SWITCH HAVING INDEPENDENTLY GENERATED GATE AND BODY VOLTAGES
    Publication number: 20200350906
    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. in some embodiments, an RE circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
    Type: Application
    Filed: July 22, 2020
    Publication date: November 5, 2020
    Inventors: Max Samuel AUBAIN, Clint KEMERLING
  • RF circuit with switch transistor with body connection
    Patent number: 10756724
    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: August 25, 2020
    Assignee: QUALCOMM Incorporated
    Inventors: Max Samuel Aubain, Clint Kemerling
  • RF Circuit with Switch Transistor with Body Connection
    Publication number: 20190273490
    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
    Type: Application
    Filed: May 16, 2019
    Publication date: September 5, 2019
    Inventors: Max Samuel Aubain, Clint Kemerling
  • RF circuit with switch transistor with body connection
    Patent number: 9900001
    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: February 20, 2018
    Assignee: QUALCOMM Incorporated
    Inventors: Max Samuel Aubain, Clint Kemerling
  • RF circuit with switch transistor with body connection
    Patent number: 9503074
    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: November 22, 2016
    Assignee: Qualcomm Incorporated
    Inventors: Max Samuel Aubain, Clint Kemerling
  • RF Circuit with Switch Transistor with Body Connection
    Publication number: 20160261265
    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
    Type: Application
    Filed: April 23, 2015
    Publication date: September 8, 2016
    Inventors: Max Samuel Aubain, Clint Kemerling
  • RF Circuit with Switch Transistor with Body Connection
    Publication number: 20160261262
    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
    Type: Application
    Filed: March 6, 2015
    Publication date: September 8, 2016
    Inventors: Max Samuel Aubain, Clint Kemerling