Abstract: A method of producing a semiconductor device including an image recording unit composed of a plurality of separated detector mosaic regions of infrared sensitive monocrystalline compound semiconductor material disposed on an insulating layer on a surface of a semiconductor body containing an integrated circuit which functions as a readout device for the image recording body, wherein: the plurality of mosaic regions are formed by initially depositing a layer of the compound semiconductor material in polycrystalline form directly onto the surface of the insulating layer, and subsequently recrystallizing the polycrystalline material into monocrystalline form by irradiation of the polycrystalline material with a focused high energy light beam to melt the semiconductor material, followed by resolidification.

Abstract: A safety valve and system is disclosed for hydrocarbon storage tanks having a floating roof construction and provision for drainage of water from the floating roof. The floating roof is constructed to collect water on top and discharge the same through a drain connected to a flexible drain line leading to an outlet opening. If the flexible line should break or otherwise become open to the contents of the tank, there is danger of leakage of the contents from the tank with attendant environmental danger and danger of fire. This invention comprises a valve which responds automatically to the presence or absence of water in the drainage line and is closed in the absence of water or the presence of hydrocarbons in the valve. The valve is motor operated electrically by storage batteries which are recharged by a solar panel. When the valve is empty of water or filled with hydrocarbons, sensors cause the valve to close.

Abstract: A method of setting the lifetime of charge carriers in a semiconductor body by the formation of recombination centers in the semiconductor body. The quantity of the recombination centers forming material necessary to provide the desired concentration in the semiconductor body is applied to the surface of the semiconductor body and into the surface thereof by ion implantation, and thereafter, in order to diffuse the material into the semiconductor body, the body is heated until an approximately stationary value for the charge carrier lifetime has developed in the entire volume of the body.