Patents by Inventor Max Shih-kuan Chen

Max Shih-kuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10483356
    Abstract: A power semiconductor device and method for making same are disclosed. The device includes a source bonding pad and a drain bonding pad, a drain metallization structure including a drain field plate connected to the drain bonding pad, and a source metallization structure comprising a source field plate connected to the source bonding pad. At least a portion of at least one of the bonding pads is situated directly over an active area. A dimension of at least one of the field plates varies depending upon the structure adjacent to the field plate.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: November 19, 2019
    Assignee: SILICONIX INCORPORATED
    Inventors: Max Shih-kuan Chen, Hao-Che Chien, Loizos Efthymiou, Florin Udrea, Giorgia Longobardi, Gianluca Camuso
  • Publication number: 20190267456
    Abstract: A power semiconductor device and method for making same are disclosed. The device includes a source bonding pad and a drain bonding pad, a drain metallization structure including a drain field plate connected to the drain bonding pad, and a source metallization structure comprising a source field plate connected to the source bonding pad. At least a portion of at least one of the bonding pads is situated directly over an active area. A dimension of at least one of the field plates varies depending upon the structure adjacent to the field plate.
    Type: Application
    Filed: February 27, 2018
    Publication date: August 29, 2019
    Applicant: SILICONIX INCORPORATED
    Inventors: Max Shih-kuan Chen, Hao-Che Chien, Loizos Efthymiou, Florin Udrea, Giorgia Longobardi, Gianluca Camuso