Abstract: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.

Abstract: Thermal interface materials and method of using the same in packaging are provided. In one aspect, a thermal interface material is provided that includes an indium preform that has a first surface and a second surface opposite to the first surface, an interior portion and a peripheral boundary. The indium preform has a channel extending from the peripheral boundary towards the interior portion. The channel enables flux to liberate during thermal cycling.

Abstract: Various methods and apparatus for establishing a thermal pathway for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes forming a metal layer on a semiconductor chip and forming a gel-type thermal interface material layer on the metal layer. A solvent and a catalyst material are applied to the metal layer prior to forming the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.

Abstract: Thermal interface materials and method of using the same in packaging are provided. In one aspect, a thermal interface material is provided that includes an indium preform that has a first surface and a second surface opposite to the first surface, an interior portion and a peripheral boundary. The indium preform has a channel extending from the peripheral boundary towards the interior portion. The channel enables flux to liberate during thermal cycling.

Abstract: Various methods and apparatus for establishing a thermal pathway for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes forming a metal layer on a semiconductor chip and forming a gel-type thermal interface material layer on the metal layer. A solvent and a catalyst material are applied to the metal layer prior to forming the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.

Abstract: Thermal interface materials and method of using the same in packaging are provided. In one aspect, a thermal interface material is provided that includes an indium preform that has a first surface and a second surface opposite to the first surface, an interior portion and a peripheral boundary. The indium preform has a channel extending from the peripheral boundary towards the interior portion. The channel enables flux to liberate during thermal cycling.

Abstract: A system and method may be utilized to thermally characterize a live integrated circuit device. The system and method can determine the thermal transfer function of the device by analyzing environment temperature, and the temperature of the integrated circuit die over a time period. The time period can be between the removal of power to the device and a time when a thermal equilibrium is reached or between other changes in power parameters provided to the device. The thermal characteristics can be utilized in a feed forward algorithm for controlling temperature of the integrated circuit device and to determine interface integrity.

Abstract: In order to maintain a semiconductor device under test at a generally constant temperature, the temperature change of the device under test is characterized as the device under test undergoes changes in power level in response to an electrical testing sequence. Additionally, the temperature change of the device under test is characterized in response to changes in power level of a thermal head associated with the device under test. This information is used to select power levels of the thermal head during the electrical testing sequence so that the device under test remains at a substantially constant temperature during the electrical testing sequence.

Abstract: Apparatus herein provides for a chosen level of power dissipation of a resistor, for example, the heating element of a thermal head assembly. The resistance of the resistor changes upon a change in temperature thereof, for example, due to increased flow of current therethrough. The apparatus includes a resistive shunt in series with the resistor, a first differential amplifier, with voltage drop across the resistor being provided to first and second input terminals of the first differential amplifier, and a second differential amplifier, voltage drop across the shunt being provided to first and second input terminals of the second differential amplifier. The output signals from the first and second differential amplifiers are provided to a voltage multiplier. The output signal from the voltage multiplier is provided to an input terminal of a power operational amplifier, and a programming sequence voltage is supplied to another input terminal of the power operational amplifier.