Abstract: Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the substrate may be elevated to a temperature less than 700° C. While the substrate temperature is elevated, a group V precursor may be flowed into the deposition chamber in order to transform the hydrogen terminated (Si—H) surface of the passivation layer into an Arsenic terminated (Si—As) surface. After the substrate has been cooled, a group III precursor and the group V precursor may be flowed in order to form a nucleation layer. Finally, at an elevated temperature, the group III precursor and group V precursor may be flowed in order to form a bulk III-V layer.

Abstract: The present invention is directed to a paste composition comprising Al and Sn dispersed in an organic medium and to paste compositions that provide a solderable electrode. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste compositions that provide a solderable electrode are particularly useful for forming a solar cell back side solderable electrode.

Abstract: Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.

Abstract: Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the substrate may be elevated to a temperature less than 700° C. While the substrate temperature is elevated, a group V precursor may be flowed into the deposition chamber in order to transform the hydrogen terminated (Si—H) surface of the passivation layer into an Arsenic terminated (Si—As) surface. After the substrate has been cooled, a group III precursor and the group V precursor may be flowed in order to form a nucleation layer. Finally, at an elevated temperature, the group III precursor and group V precursor may be flowed in order to form a bulk III-V layer.

Abstract: Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.

Abstract: A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.

Abstract: The present invention is directed to a paste composition comprising Al and Sn dispersed in an organic medium and to paste compositions that provide a solderable electrode. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste compositions that provide a solderable electrode are particularly useful for forming a solar cell back side solderable electrode.

Abstract: A ceramic boron-containing dopant paste is disclosed. The ceramic boron-containing dopant paste further comprising a set of solvents, a set of ceramic particles dispersed in the set of solvents, a set of boron compound particles dispersed in the set of solvents, a set of binder molecules dissolved in the set of solvents. Wherein, the ceramic boron-containing dopant paste has a shear thinning power law index n between about 0.01 and about 1.

Abstract: A method for manufacturing an interdigitated back contact solar cell. comprising the steps of: (a) providing a silicon substrate doped with a first dopant; (b) doping the rear surface of the silicon substrate with a second dopant in a first pattern; (c) forming a silicon dioxide layer on the rear surface; (d) depositing a silicon-containing paste comprising silicon-containing particles on the silicon dioxide layer in a second pattern; (e) exposing the substrate to a diffusion ambient, wherein the diffusion ambient comprises a third dopant and wherein the third dopant is a counter dopant to the second dopant; (f) heating the substrate in a drive-in ambient; and (g) removing the silicon dioxide layer and the doped silicate glass layer from the silicon substrate, wherein a region doped with the second dopant and a region doped with the third dopant collectively form an interdigitated pattern on the rear surface of the silicon substrate.

Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multi-step ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated at each step. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first step to facilitate removal of the porogen and create a porous dielectric film. In a second step, the film is exposed to UV radiation to increase crosslinking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

Abstract: A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.

Abstract: A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns.

Abstract: A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface.

Abstract: A ceramic boron-containing dopant paste is disclosed. The ceramic boron-containing dopant paste further comprising a set of solvents, a set of ceramic particles dispersed in the set of solvents, a set of boron compound particles dispersed in the set of solvents, a set of binder molecules dissolved in the set of solvents. Wherein, the ceramic boron-containing dopant paste has a shear thinning power law index n between about 0.01 and about 1.

Abstract: A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern.

Abstract: A ceramic boron-containing dopant paste is disclosed. The ceramic boron-containing dopant paste further comprising a set of solvents, a set of ceramic particles dispersed in the set of solvents, a set of boron compound particles dispersed in the set of solvents, a set of binder molecules dissolved in the set of solvents. Wherein, the ceramic boron-containing dopant paste has a shear thinning power law index n between about 0.01 and about 1.

Abstract: A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.

Abstract: A method of printing an ink on a wafer surface configured with a set of non-rounded peaks and a set of non-rounded valleys is disclosed. The method includes exposing the wafer including at least some non-rounded peaks and at least some of the non-rounded valleys in a region to an etchant. The method further includes depositing the ink on the region, wherein a set of rounded peaks and a set of rounded valleys are formed.