Abstract: The present invention is directed to a wavelength converter comprising a non-luminescent substrate layer, at least one polysiloxane layer, wherein at least one of the polysiloxane layers comprises a phosphor material. Furthermore, the present invention is directed to a method for preparing a wavelength converter, a light emitting device and a method for preparing a light emitting device.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ?30 ?m.

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangem

Abstract: An optoelectronic device and a method of producing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes components including an active layer stack, a housing and electrical contacts and at least one protective layer on a surface of at least one of the components, wherein the at least one protective layer includes a cross-linked material with a three-dimensional polysiloxane-based network.

Abstract: The present invention is directed to a wavelength converter comprising a non-luminescent substrate layer, at least one polysiloxane layer, wherein at least one of the polysiloxane layers comprises a phosphor material. Furthermore, the present invention is directed to a method for preparing a wavelength converter, a light emitting device and a method for preparing a light emitting device.

Abstract: A method for producing a converter element, a converter element and a light emitting device are disclosed. In an embodiment a converter element includes a cured layer having at least one phosphor and a cured polysiloxane powder, wherein the phosphor and the cured polysiloxane powder are embedded in a matrix material comprising a cured polysiloxane resin.

Abstract: An optoelectronic device and a method of producing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes components including an active layer stack, a housing and electrical contacts and at least one protective layer on a surface of at least one of the components, wherein the at least one protective layer includes a cross-linked material with a three-dimensional polysiloxane-based network.

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangem

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangem

Abstract: An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

Abstract: A method for producing a converter element, a converter element and a light emitting device are disclosed. In an embodiment a method for producing a converter element providing at least one phosphor and a liquid polysiloxane resin and preparing a cured polysiloxane powder from a first fraction of the liquid polysiloxane resin. The method further includes preparing a mixture including the at least one phosphor, the cured polysiloxane powder and a second fraction of the liquid polysiloxane resin, casting and curing the mixture to a cured layer and singulating the cured layer.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ?30 ?m.

Abstract: A method for producing a converter element, a converter element and a light emitting device are disclosed. In an embodiment a method for producing a converter element providing at least one phosphor and a liquid polysiloxane resin and preparing a cured polysiloxane powder from a first fraction of the liquid polysiloxane resin. The method further includes preparing a mixture including the at least one phosphor, the cured polysiloxane powder and a second fraction of the liquid polysiloxane resin, casting and curing the mixture to a cured layer and singulating the cured layer.

Abstract: An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangem

Abstract: Disclosed herein are wavelength converting compositions, wavelength converters and light sources including the same. The wavelength converting compositions include at least one poly(silphenylene-siloxane) gel matrix that contains at least one wavelength conversion material, such as one or more phosphors in powdered and/or particulate form. Methods of making such compositions and converters are also disclosed. Wavelength converted light sources such as wavelength converted light emitting diode packages are also disclosed. The poly(silphenylene-siloxane) gel matrix exhibits relatively high thermal stability, as well as desirable optical properties.

Abstract: A silicone-grafted core-shell particle is described wherein the silicone-grafted core-shell particle comprises a core of an inorganic particle and a shell of a grafted poly(dimethylsiloxane) polymer formed from a bi-terminated poly(dimethylsiloxane) having reactive groups at each terminal end. The silicone-grafted core-shell particles may be dispersed in a polysiloxane polymer matrix and employed as an LED encapsulant.

Abstract: A silicone-grafted core-shell particle is described wherein the silicone-grafted core-shell particle comprises a core of an inorganic particle and a shell of a grafted poly(dimethylsiloxane) polymer formed from a bi-terminated poly(dimethylsiloxane) having reactive groups at each terminal end. The silicone-grafted core-shell particles may be dispersed in a polysiloxane polymer matrix and employed as an LED encapsulant.

Abstract: Disclosed herein are wavelength converting compositions, wavelength converters and light sources including the same. The wavelength converting compositions include at least one poly(silphenylene-siloxane) gel matrix that contains at least one wavelength conversion material, such as one or more phosphors in powdered and/or particulate form. Methods of making such compositions and converters are also disclosed. Wavelength converted light sources such as wavelength converted light emitting diode packages are also disclosed. The poly(silphenylene-siloxane) gel matrix exhibits relatively high thermal stability, as well as desirable optical properties.

Abstract: A silicone-grafted core-shell particle is described wherein the silicone-grafted core-shell particle comprises a core of an inorganic particle and a shell of a grafted poly(dimethylsiloxane) polymer formed from a bi-terminated poly(dimethylsiloxane) having reactive groups at each terminal end. The silicone-grafted core-shell particles may be dispersed in a polysiloxane polymer matrix and employed as an LED encapsulant.