Patents by Inventor Maxim Nikolaevich Blashenkov

Maxim Nikolaevich Blashenkov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical vapor deposition reactor
    Patent number: 7011711
    Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.
    Type: Grant
    Filed: May 23, 2003
    Date of Patent: March 14, 2006
    Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Ruslan Ivanovich Gorbunov, Sergey Igorevich Stepanov, Vladislav Evgenievich Bougrov, Vladimir Nikolaev, Maxim Nikolaevich Blashenkov, Alexander Nikolaevich Andreev, Stephen Sen-Tien Lee
  • Chemical vapor deposition reactor
    Publication number: 20040129213
    Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.
    Type: Application
    Filed: May 23, 2003
    Publication date: July 8, 2004
    Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Ruslan Ivanovich Gorbunov, Sergey Igorevich Stepanov, Vladislav Evgenievich Bougrov, Vladimir Nikolaev, Maxim Nikolaevich Blashenkov, Alexander Nikolaevich Andreev, Stephen Sen-Tien Lee