Patents by Inventor Maxime Argoud

Maxime Argoud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149245
    Abstract: A method for coating chips resting, by a rear face opposite to a front face, on a main face of a support substrate, and separated from each other by an inter-chip space, includes a step of forming a photosensitive coating film covering the front faces and the inter-chip spaces. The method further includes a first photolithographic sequence which comprises an insolation sub-step, and a dissolution sub-step. The sequence leads to a partial removal of the photosensitive coating film so as to maintain the film exclusively at the inter-chip spaces and, advantageously recessed relative to the front faces.
    Type: Application
    Filed: March 2, 2020
    Publication date: May 12, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Aurélien SUHM, Maxime ARGOUD
  • Patent number: 10978594
    Abstract: The invention relates to a field-effect transistor including an active zone including a source, a channel, a drain and a control gate, which is positioned level with said channel, allowing a current to flow through said channel between the source and drain along an x-axis, said channel including: a first edge of separation with said source; and a second edge of separation with said drain; said channel being compressively or tensilely strained, characterized in that said channel includes a localized perforation or a set of localized perforations along at least said first and/or second edge of said channel so as to also create at least one shear strain in said channel. The invention also relates to a process for fabricating said transistor.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: April 13, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Emmanuel Augendre, Maxime Argoud, Sylvain Maitrejean, Pierre Morin, Raluca Tiron
  • Publication number: 20210104634
    Abstract: A field-effect transistor including an active zone comprises a source, a channel, a drain and a control gate, which is positioned level with the channel, allowing a current to flow through the channel between the source and drain along an x-axis, the channel comprising: a first edge of separation with the source; and a second edge of separation with the drain; the channel being compressively or tensilely strained, wherein the channel includes a localized perforation or a set of localized perforations along at least the first and/or second edge of the channel so as to also create at least one shear strain in the channel. A process for fabricating the transistor is provided.
    Type: Application
    Filed: December 16, 2020
    Publication date: April 8, 2021
    Inventors: Emmanuel AUGENDRE, Maxime ARGOUD, Sylvain MAITREJEAN, Pierre MORIN, Raluca TIRON
  • Patent number: 10784108
    Abstract: A method for forming a functionalised assembly guide intended for the self-assembly of a block copolymer by graphoepitaxy, includes forming on the surface of a substrate a neutralisation layer made of a first material having a first neutral chemical affinity with regard to the block copolymer; forming on the neutralisation layer a first mask including at least one recess; depositing on the neutralisation layer a second material having a second preferential chemical affinity for one of the copolymer blocks, in such a way as to fill the at least one recess of the first mask; and selectively etching the first mask relative to the first and second materials, thereby forming at least one guide pattern made of the second material arranged on the neutralisation layer.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: September 22, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Guillaume Claveau, Maxime Argoud, Nicolas Posseme, Raluca Tiron
  • Publication number: 20190267233
    Abstract: A method for forming a functionalised assembly guide intended for the self-assembly of a block copolymer by graphoepitaxy, includes forming on the surface of a substrate a neutralisation layer made of a first material having a first neutral chemical affinity with regard to the block copolymer; forming on the neutralisation layer a first mask including at least one recess; depositing on the neutralisation layer a second material having a second preferential chemical affinity for one of the copolymer blocks, in such a way as to fill the at least one recess of the first mask; and selectively etching the first mask relative to the first and second materials, thereby forming at least one guide pattern made of the second material arranged on the neutralisation layer.
    Type: Application
    Filed: October 20, 2017
    Publication date: August 29, 2019
    Inventors: Guillaume CLAVEAU, Maxime ARGOUD, Nicolas POSSEME, Raluca TIRON
  • Patent number: 9599890
    Abstract: The invention concerns a manufacturing method for nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, said method being characterized in that it comprises the following steps: partially irradiating said copolymer film to form a first irradiated area and a second non-irradiated area in said copolymer film, then treating said copolymer film in a developer solvent to selectively remove at least said PMMA nanodomains of said first irradiated area of said copolymer film.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: March 21, 2017
    Assignees: ARKEMA FRANCE, COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Christophe Navarro, Maxime Argoud, Xavier Chevalier, Raluca Tiron, Ahmed Gharbi
  • Patent number: 9427948
    Abstract: A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 107 GPa·?m3, securing the first and second thin films to the first and second faces of the flexible substrate respectively so as to form a stack including the flexible structure delimited by the first and second embrittlement regions, the flexible structure having a stiffening effect suitable for allowing transfers of the first and second thin films, and applying a thermal budget so as to transfer the first and second thin films onto the flexible substrate.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: August 30, 2016
    Assignee: COMMISSARIATE A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert Moriceau, Maxime Argoud, Frank Fournel, Frederic Mazen, Christophe Morales
  • Publication number: 20160181439
    Abstract: A field-effect transistor including an active zone comprises a source, a channel, a drain and a control gate, which is positioned level with the channel, allowing a current to flow through the channel between the source and drain along an x-axis, the channel comprising: a first edge of separation with the source; and a second edge of separation with the drain; the channel being compressively or tensilely strained, wherein the channel includes a localized perforation or a set of localized perforations along at least the first and/or second edge of the channel so as to also create at least one shear strain in the channel. A process for fabricating the transistor is provided.
    Type: Application
    Filed: December 22, 2015
    Publication date: June 23, 2016
    Inventors: Emmanuel AUGENDRE, Maxime ARGOUD, Sylvain MAITREJEAN, Pierre MORIN, Raluca TIRON
  • Patent number: 9219004
    Abstract: A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: December 22, 2015
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert Moriceau, Maxime Argoud, Christophe Morales, Marc Zussy
  • Publication number: 20150331313
    Abstract: The invention concerns a manufacturing method for nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, said method being characterized in that it comprises the following steps: partially irradiating said copolymer film to form a first irradiated area and a second non-irradiated area in said copolymer film, then treating said copolymer film in a developer solvent to selectively remove at least said PMMA nanodomains of said first irradiated area of said copolymer film.
    Type: Application
    Filed: December 16, 2013
    Publication date: November 19, 2015
    Applicants: ARKEMA FRANCE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Christophe NAVARRO, Maxime ARGOUD, Xavier CHEVALIER, Raluca TIRON, Ahmed GHARBI
  • Patent number: 9076841
    Abstract: A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy Ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds Si—O—Si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy Ei takes a first value Ei1 in step c) and a second value Ei2 in step f), with Ei1>E0 and Ei2<Ef.
    Type: Grant
    Filed: September 20, 2012
    Date of Patent: July 7, 2015
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank Fournel, Maxime Argoud, Jeremy Da Fonseca, Hubert Moriceau
  • Patent number: 8906780
    Abstract: A method for transferring a thin layer of monocrystalline silicon from a free face of a monocrystalline silicon donor substrate having a thickness greater than that of the thin layer includes implanting ions through the free face to form a buried brittle layer in the silicon, using a polymer layer, bonding the donor substrate, by the free face, to a receiver substrate, and fracturing the thin layer from the donor substrate at the buried brittle layer by thermal fracture processing, and selecting conditions of implantation such that a thickness of the thin layer is smaller than 10 micrometers, and a thickness of the polymer layer is below a critical threshold defined as a function of energy and dose of the implantation, the critical threshold being less than or equal to the lesser of 500 nanometers and the thin layer's thickness.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: December 9, 2014
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Centre National de la Recherche Scientifique
    Inventors: Maxime Argoud, Hubert Moriceau, Christian Fretigny
  • Publication number: 20140295642
    Abstract: A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy Ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds Si—O—Si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy Ei takes a first value Ei1 in step c) and a second value Ei2 in step f), with Ei1>E0 and Ei2<Ef.
    Type: Application
    Filed: September 20, 2012
    Publication date: October 2, 2014
    Inventors: Frank Fournel, Maxime Argoud, Jeremy Da Fonseca, Hubert Moriceau
  • Publication number: 20140238213
    Abstract: A method for performing at least one mechanical operation on a structure including at least one first layer stacked onto at least a second layer, the first layer including at least one material with a Young's modulus equal to or higher than about 50 GPa and higher than that of at least one material of the second layer, the method including: thinning the first layer, located at least at one area of the structure intended to undergo application of a pressing force upon implementing the mechanical operation; and implementing the mechanical operation including applying the pressing force located on at least one part of the area of the structure.
    Type: Application
    Filed: October 2, 2012
    Publication date: August 28, 2014
    Applicant: Commissariat a l'energie atomique et aux ene alt
    Inventors: Hubert Moriceau, Maxime Argoud, Marc Zussy
  • Publication number: 20130196484
    Abstract: A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.
    Type: Application
    Filed: August 24, 2011
    Publication date: August 1, 2013
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert Moriceau, Maxime Argoud, Christophe Morales, Marc Zussy
  • Publication number: 20130092320
    Abstract: A method for transferring a thin layer of monocrystalline silicon from a free face of a monocrystalline silicon donor substrate having a thickness greater than that of the thin layer includes implanting ions through the free face to form a buried brittle layer in the silicon, using a polymer layer, bonding the donor substrate, by the free face, to a receiver substrate, and fracturing the thin layer from the donor substrate at the buried brittle layer by thermal fracture processing, and selecting conditions of implantation such that a thickness of the thin layer is smaller than 10 micrometers, and a thickness of the polymer layer is below a critical threshold defined as a function of energy and dose of the implantation, the critical threshold being less than or equal to the lesser of 500 nanometers and the thin layer's thickness.
    Type: Application
    Filed: June 21, 2011
    Publication date: April 18, 2013
    Inventors: Maxime Argoud, Hubert Moriceau, Christian Fretigny