Abstract: The invention relates to a method for dividing a transparent workpiece (1) by means of pulsed laser radiation (2) by way of creating a beam convergence zone (3) in the volume of the workpiece, in which the intensity of the laser radiation (2) exceeds a threshold value for non-linear absorption, wherein the beam convergence zone (3) and the workpiece (1) are moved relative to each other, thereby creating a two-dimensional weakening in the workpiece (1) extending along a predetermined separating line (4), and wherein the workpiece (1) is subsequently divided along the separating line (4). The invention proposes that by selecting the duration of the energy input generated by the non-linear absorption of the pulsed laser radiation and by spatial beam shaping, non-linear propagation of the laser radiation (2) in the volume (1) of the workpiece outside the beam convergence zone (3) is suppressed.

Abstract: The invention relates to a method for welding a first workpiece (11) to a second workpiece (12) by means of a laser. It is an object of the invention to provide a reliable, repeatable and reproducible approach for laser welding of two workpieces one of which consists of a semiconductor material.

Abstract: According to one aspect, the invention concerns a system (100) for the in-depth optical functionalization of a sample (10) made of semiconductor material, comprising: a source (20) for emitting a laser beam formed by pulses of effective duration between 1 ps and 100 ns, having a wavelength in the spectral transparency band of the material; a microscope objective (40) for deep focusing in the sample of the laser beam in a predetermined pattern, the light intensity per pulse in a focal volume of the laser beam being adapted for multiphoton absorption in the semiconductor material; a device (30) for measuring the real part of the refractive index of the sample at each point of the pattern; a control unit (60) for controlling the number of pulses received per pattern point as a function of said measurement of the real part of the refractive index so as to obtain, at each pattern point, a progressive modification of the real part of the refractive index of the material until a relative variation of the real par

Abstract: According to one aspect, the invention concerns a system (100) for the in-depth optical functionalization of a sample (10) made of semiconductor material, comprising: a source (20) for emitting a laser beam formed by pulses of effective duration between 1 ps and 100 ns, having a wavelength in the spectral transparency band of the material; a microscope objective (40) for deep focusing in the sample of the laser beam in a predetermined pattern, the light intensity per pulse in a focal volume of the laser beam being adapted for multiphoton absorption in the semiconductor material; a device (30) for measuring the real part of the refractive index of the sample at each point of the pattern; a control unit (60) for controlling the number of pulses received per pattern point as a function of said measurement of the real part of the refractive index so as to obtain, at each pattern point, a progressive modification of the real part of the refractive index of the material until a relative variation of the real par