Patents by Inventor Maxime Forster

Maxime Forster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150136211
    Abstract: A photovoltaic device includes a first semiconducting area having an N-doped silicon base and a second semiconducting area having a P-doped silicon base. The two semiconducting areas are configured to form a PN junction. The first semiconducting area is devoid of boron and includes a concentration of P-type doping impurities that is at least equal to 20% of the concentration of N-type doping impurities.
    Type: Application
    Filed: February 28, 2013
    Publication date: May 21, 2015
    Inventors: Maxime Forster, Roland Einhaus, Andres Cuevas
  • Patent number: 8900981
    Abstract: A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: December 2, 2014
    Assignees: Apollon Solar, Siltronix
    Inventors: Maxime Forster, Erwann Fourmond, Jacky Stadler, Roland Einhaus, Hubert Lauvray
  • Publication number: 20130115762
    Abstract: A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.
    Type: Application
    Filed: July 1, 2011
    Publication date: May 9, 2013
    Applicants: SILTRONIX, APOLLON SOLAR
    Inventors: Maxime Forster, Erwann Fourmond, Jacky Stadler, Roland Einhaus, Hubert Lauvray