Abstract: There is provided a method for manufacturing a transistor from a stack including at least one gate pattern comprising at least one flank, the method including forming at least one gate spacer over at least the flank of the gate pattern; and reducing, after a step of exposure of the stack to a temperature greater than or equal to 600° C., of a dielectric permittivity of the at least one gate spacer, the reducing including at least one ion implantation in a portion at least of a thickness of the at least one gate spacer.

Abstract: A method for forming spacers of a gate of a field effect transistor is provided, the gate including sides and a top and being located above a layer of a semiconductor material, the method including a step of forming a dielectric layer that covers the gate; after the step of forming the dielectric layer, at least one step of modifying the dielectric layer by ion implantation while retaining non-modified portions of the dielectric layer covering sides of the gate and being at least non-modified over their entire thickness; the ions having a hydrogen base and/or a helium base; at least one step of removing the modified dielectric layer using a selective etching of the dielectric layer, wherein the removing includes a wet etching with a base of a solution including hydrofluoric acid diluted to x % by weight, with x?0.2, and having a pH less than or equal to 1.5.

Abstract: A method for forming spacers of a gate of a field effect transistor is provided, the gate including sides and a top and being located above a layer of a semiconductor material, the method including a step of forming a dielectric layer that covers the gate; after the step of forming the dielectric layer, at least one step of modifying the dielectric layer by ion implantation while retaining non-modified portions of the dielectric layer covering sides of the gate and being at least non-modified over their entire thickness; the ions having a hydrogen base and/or a helium base; at least one step of removing the modified dielectric layer using a selective etching of the dielectric layer, wherein the removing includes a wet etching with a base of a solution including hydrofluoric acid diluted to x % by weight, with x?0.2, and having a pH less than or equal to 1.5.

Abstract: A method for forming spacers of a gate of a field-effect transistor is provided, including at least one step of forming a protective layer covering the gate; depositing a layer comprising carbon, said layer being disposed distant from said transistor; modifying the protective layer to form a modified protective layer; forming a protective film on the layer comprising carbon; removing the protective film on surfaces of the protective film that are perpendicular to a main implantation direction; selectively removing the layer comprising carbon; and at least one step of selectively removing the modified protective layer.

Abstract: There is provided a method for manufacturing a transistor from a stack including at least one gate pattern comprising at least one flank, the method including forming at least one gate spacer over at least the flank of the gate pattern; and reducing, after a step of exposure of the stack to a temperature greater than or equal to 600° C., of a dielectric permittivity of the at least one gate spacer, the reducing including at least one ion implantation in a portion at least of a thickness of the at least one gate spacer.

Abstract: A method for forming spacers of a gate of a field-effect transistor is provided, including at least one step of forming a protective layer covering the gate; depositing a layer comprising carbon, said layer being disposed distant from said transistor; modifying the protective layer to form a modified protective layer; forming a protective film on the layer comprising carbon; removing the protective film on surfaces of the protective film that are perpendicular to a main implantation direction; selectively removing the layer comprising carbon; and at least one step of selectively removing the modified protective layer.