Abstract: A method for preparing a microelectronic component includes cleaning of the surface of an exposed layer with a basis of a III-V material by a cyclic plasma treatment, each cycle comprising a purge phase and a plasma treatment phase. During the formation of the plasma, a bias voltage is applied to the substrate. The method further includes depositing, on the cleaned surface, a subsequent layer. The method provides an optimal cleaning of the exposed layer while minimising, and preferably avoiding degradation of the structure. The preparation method thus makes it possible to improve the quality of the interface between the layer with a basis of a III-V material and the subsequent layer. The electrical properties of the component are consequently improved.

Abstract: A method for producing, on a structure based on a material III-V, of a dielectric layer, the method comprising producing a first dielectric film by ALD by carrying out a plurality of first cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a first material and one injection in the reaction chamber of a water or ozone-based precursor; and producing, on the first dielectric film, a second dielectric film by plasma-enhanced ALD by carrying out a plurality of second cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a second material and one injection in the reaction chamber of an oxygen or nitrogen based precursor.

Abstract: A method for producing an aluminium nitride (AlN)-based layer on a structure with the basis of silicon (Si) or with the basis of a III-V material, may include several deposition cycles performed in a plasma reactor comprising a reaction chamber inside which is disposed a substrate having the structure. Each deposition cycle may include at least the following: deposition of aluminium-based species on an exposed surface of the structure, the deposition including at least one injection into the reaction chamber of an aluminium (Al)-based precursor; and nitridation of the exposed surface of the structure, the nitridation including at least one injection into the reaction chamber of a nitrogen (N)-based precursor and the formation in the reaction chamber of a nitrogen-based plasma. During the formation of the nitrogen-based plasma, a non-zero polarisation voltage Vbias_substrate may be applied to the substrate.