Patents by Inventor Maxime LEGALLAIS

Maxime LEGALLAIS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230290633
    Abstract: A method for producing, on a structure based on a material III-V, of a dielectric layer, the method comprising producing a first dielectric film by ALD by carrying out a plurality of first cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a first material and one injection in the reaction chamber of a water or ozone-based precursor; and producing, on the first dielectric film, a second dielectric film by plasma-enhanced ALD by carrying out a plurality of second cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a second material and one injection in the reaction chamber of an oxygen or nitrogen based precursor.
    Type: Application
    Filed: July 8, 2021
    Publication date: September 14, 2023
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLE ALPES
    Inventors: Maxime LEGALLAIS, Bassem SALEM, Thierry BARON, Romain GWOZIECKI, Marc PLISSONNIER
  • Publication number: 20230111123
    Abstract: A method for producing an aluminium nitride (AlN)-based layer on a structure with the basis of silicon (Si) or with the basis of a III-V material, may include several deposition cycles performed in a plasma reactor comprising a reaction chamber inside which is disposed a substrate having the structure. Each deposition cycle may include at least the following: deposition of aluminium-based species on an exposed surface of the structure, the deposition including at least one injection into the reaction chamber of an aluminium (Al)-based precursor; and nitridation of the exposed surface of the structure, the nitridation including at least one injection into the reaction chamber of a nitrogen (N)-based precursor and the formation in the reaction chamber of a nitrogen-based plasma. During the formation of the nitrogen-based plasma, a non-zero polarisation voltage Vbias_substrate may be applied to the substrate.
    Type: Application
    Filed: February 25, 2021
    Publication date: April 13, 2023
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLE ALPES
    Inventors: Maxime LEGALLAIS, Bassem SALEM, Thierry BARON, Romain GWOZIECKI, Marc PLISSONNIER