Patents by Inventor Maxime Lemenager

Maxime Lemenager has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having porous region embedded structure and method of manufacture thereof
    Patent number: 12054838
    Abstract: A semiconductor device that includes a porous anodic region for embedding a structure. The porous anodic region is defined by a ductile hard mask. The ductility of the hard mask reduces the potential for the hard mask to crack during the formation by anodization of the porous anodic region. The ductile hard mask may be a metal. The metal may be selected to form a stable oxide when exposed to the anodization electrolyte thereby enabling the hard mask to self-repair if a crack occurs during the anodization process.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: August 6, 2024
    Assignees: MURATA MANUFACTURING CO., LTD, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frédéric Voiron, Julien El Sabahy, Maxime Lemenager, Guy Parat
  • SEMICONDUCTOR DEVICE HAVING POROUS REGION EMBEDDED STRUCTURE AND METHOD OF MANUFACTURE THEREOF
    Publication number: 20210032766
    Abstract: A semiconductor device that includes a porous anodic region for embedding a structure. The porous anodic region is defined by a ductile hard mask. The ductility of the hard mask reduces the potential for the hard mask to crack during the formation by anodization of the porous anodic region. The ductile hard mask may be a metal. The metal may be selected to form a stable oxide when exposed to the anodization electrolyte thereby enabling the hard mask to self-repair if a crack occurs during the anodization process.
    Type: Application
    Filed: October 20, 2020
    Publication date: February 4, 2021
    Inventors: Frédéric Voiron, Julien El Sabahy, Maxime Lemenager, Guy Parat