Patents by Inventor Maxime MOULIN

Maxime MOULIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RF SUBSTRATE COMPRISING DEPLETION REGIONS INDUCED BY FIELD EFFECT
    Publication number: 20230411309
    Abstract: A structure for an RF device provided with a semiconductor region coated with a heterogeneous dielectric region, the heterogeneous dielectric region including, in at least one first direction parallel to a main plane of the substrate, an alternation of first areas made of a first dielectric material with positive fixed charges and of second dielectric areas made of a second dielectric material with negative fixed charge in order to create an alternation of polarity allowing preventing the formation of a parasitic conduction layer in the semiconductor region.
    Type: Application
    Filed: June 19, 2023
    Publication date: December 21, 2023
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITE CATHOLIQUE DE LOUVAIN
    Inventors: Louis HUTIN, Maxime MOULIN, Thibaud FACHE, Christophe PLANTIER, Jean-Pierre RASKIN, Martin RACK
  • RF substrate with junctions having an improved layout
    Patent number: 11362051
    Abstract: Making a semiconductor-on-insulator substrate provided with an eddy current blocking structure (20) formed in a segment (22) doped according to doping of a first type, of doped regions (23) periodically distributed on one or more parallel rows and according to a pattern (M2) and an improved arrangement.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: June 14, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean-Pierre Colinge, Louis Hutin, Maxime Moulin, Thibaud Fache
  • RF SUBSTRATE WITH JUNCTIONS HAVING AN IMPROVED LAYOUT
    Publication number: 20210296266
    Abstract: Making a semiconductor-on-insulator substrate provided with an eddy current blocking structure (20) formed in a segment (22) doped according to doping of a first type, of doped regions (23) periodically distributed on one or more parallel rows and according to a pattern (M2) and an improved arrangement.
    Type: Application
    Filed: March 12, 2021
    Publication date: September 23, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean-Pierre COLINGE, Louis HUTIN, Maxime MOULIN, Thibaud FACHE