Patents by Inventor Maxime Rousseau

Maxime Rousseau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated microelectronic device with through-vias
    Patent number: 8410574
    Abstract: An integrated microelectronic device is formed from a substrate having a first side and a second side and including a doped active zone (2) in the first side of the substrate. A circuit component is situated in the doped active zone. A through silicon via extends between the second side and the first side, the via being electrically isolated from the substrate by an insulating layer. A buffer zone is situated between the insulating layer and the doped active zone. This buffer zone is positioned under a shallow trench isolation zone provided around the doped active zone. The buffer zone functions to reduce the electrical coupling between the through silicon via and the doped active zone.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: April 2, 2013
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis Farcy, Maxime Rousseau
  • INTEGRATED MICROELECTRONIC DEVICE WITH THROUGH-VIAS
    Publication number: 20110140231
    Abstract: An integrated microelectronic device is formed from a substrate having a first side and a second side and including a doped active zone (2) in the first side of the substrate. A circuit component is situated in the doped active zone. A through silicon via extends between the second side and the first side, the via being electrically isolated from the substrate by an insulating layer. A buffer zone is situated between the insulating layer and the doped active zone. This buffer zone is positioned under a shallow trench isolation zone provided around the doped active zone. The buffer zone functions to reduce the electrical coupling between the through silicon via and the doped active zone.
    Type: Application
    Filed: December 7, 2010
    Publication date: June 16, 2011
    Applicant: STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Alexis Farcy, Maxime Rousseau
  • Alignment method of two substrates by microcoils
    Patent number: 7902837
    Abstract: Substrates to be aligned include microcoils arranged at the level of their facing surfaces. In an alignment phase, power is supplied to at least the microcoils of the first substrate, whereas the inductance of the microcoils of the second substrate is measured. The microcoils are preferably flat microcoils in the form of a spiral or a serpentine.
    Type: Grant
    Filed: February 6, 2009
    Date of Patent: March 8, 2011
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Maxime Rousseau, Bernard Viala
  • Alignment method of two substrates by microcoils
    Publication number: 20090215207
    Abstract: Substrates to be aligned comprise microcoils arranged at the level of their facing surfaces. In an alignment phase, power is supplied to at least the microcoils of the first substrate, whereas the inductance of the microcoils of the second substrate is measured. The microcoils are preferably flat microcoils in the form of a spiral or a serpentine.
    Type: Application
    Filed: February 6, 2009
    Publication date: August 27, 2009
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Maxime Rousseau, Bernard Viala