Abstract: A system comprising: a plasma production chamber configured to produce a plasma; a reaction chamber vaporize a precursor material with the plasma to form a reactive mixture; a quench chamber having a frusto-conical surface and a quench region formed within the quench chamber between an ejection port of the reaction chamber and a cooled mixture outlet, wherein the quench region configured to receive the reactive mixture from the ejection port, to cool the reactive mixture to form a cooled mixture, and to supply the cooled mixture to the cooled mixture outlet; and a conditioning fluid injection ring disposed at the ejection port and configured to flow a conditioning fluid directly into the reactive mixture as the reactive mixture flows through the ejection port, thereby disturbing the flow of the reactive mixture, creating turbulence within the quench region and cooling the reactive mixture to form a cooled mixture comprising condensed nanoparticles.

Abstract: A method of forming a catalytic region on a porous structure having an exterior surface and a plurality of pores, the method comprising: forming a supercritical dispersion, wherein the supercritical dispersion comprises a plurality of particles dispersed in a supercritical fluid; exposing the porous structure to the supercritical dispersion; and depositing the plurality of particles from the supercritical dispersion onto the porous structure, wherein each one of the deposited plurality of particles is catalytic, thereby forming one or more catalytic regions on the porous structure. The method is particularly well suited for creating catalytic regions within pre-formed microporous structures.

Abstract: A constricting chamber having first and second ends, the chamber comprising: an interior surface formed between the first and second ends, disposed circumferentially around and defining an interior space and a longitudinal axis of the chamber; a frusto-conical surface disposed between the first and second ends and narrowing as it extends away from the first end and into the second end; an ejection port disposed at the second end and substantially aligned with the longitudinal axis; a cover disposed at the first end, substantially perpendicular to the longitudinal axis, and comprising a center substantially aligned with the longitudinal axis; an injection port disposed on the cover proximate the center, and configured to receive a reactive mixture into the chamber; and an annular supply portion disposed circumferentially around the longitudinal axis and comprising supply port(s) configured to supply conditioning fluid into the chamber in an annular formation along the interior surface.

Abstract: A heat exchanger comprising: a gas transport conduit providing a channel through which a fluid mixture can flow; an outer conduit disposed around the gas transport conduit, the outer conduit having a first cap covering a first end and a second cap covering a second end, the gas transport conduit passing through the outer conduit; and a conductive tube passing through the outer conduit, providing a channel through which a circulating fluid can flow through the outer conduit, wherein a static fluid chamber is formed between the conductive tube and the gas transport conduit, the static fluid chamber configured to house a static fluid, wherein the gas transport conduit is configured to conduct heat from the fluid mixture in the gas transport conduit to the static fluid and the conductive tube is configured to conduct heat from the static fluid to the circulating fluid.

Abstract: An electronic system for use in a body of fluid is disclosed. The electronic system includes a first housing element and a second housing element. The second housing element is hermetically sealed to the first housing element, forming a first chamber there between. An electronic circuit is mounted within the first chamber. The electronic system further includes a second chamber internal to the second housing element. The second chamber is configured for holding a power source for the electronic circuit. Preferably, the power source is a battery pack. Also, the electronic system includes means for temporarily sealing the second chamber. Preferably, means for temporarily sealing the second chamber includes a detachable plug configured for coupling to the second housing element.

Abstract: A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.

Abstract: An automatic system for monitoring chemistry information for a body of water comprises a sensor for determining chemistry information, a microprocessor for processing chemistry information, and a housing coupled to at least one of the sensor and the microprocessor. Preferably the housing is floatable or mountable. The method of providing chemistry information of a body of water comprising the steps of obtaining a sample of the body of water and determining chemistry information.

Abstract: A method of depositing a metal film on a substrate includes a supercritical preclean step, a supercritical desorb step, and a metal deposition step. Preferably, the preclean step comprises maintaining supercritical carbon dioxide and a chelating agent in contact with the substrate in order to remove an oxide layer from a metal surface of the substrate. More preferably, the preclean step comprises maintaining the supercritical carbon dioxide, the chelating agent, and an acid in contact with the substrate. Alternatively, the preclean step comprises maintaining the supercritical carbon dioxide and an amine in contact with the oxide layer. The desorb step comprises maintaining supercritical carbon dioxide in contact with the substrate in order to remove adsorbed material from the substrate.

Abstract: The system includes a metrology module coupled to a supercritical processing chamber, and the method includes positioning a substrate on a substrate holder in a metrology chamber, measuring a residue in at least one feature of the substrate, determining a supercritical cleaning process recipe based on the measured residue, positioning the substrate on a substrate holder in a supercritical processing chamber coupled to the metrology chamber, cleaning the substrate with a supercritical fluid using the determined supercritical cleaning process recipe, and removing the substrate from the supercritical processing chamber. The method may further include re-positioning the substrate in the metrology chamber, and measuring any remaining residue in at least one feature of the substrate.

Abstract: An electronic system for use in a body of fluid is disclosed. The electronic system includes a first housing element and a second housing element. The second housing element is hermetically sealed to the first housing element, forming a first chamber there between. An electronic circuit is mounted within the first chamber. The electronic system further includes a second chamber internal to the second housing element. The second chamber is configured for holding a power source for the electronic circuit. Preferably, the power source is a battery pack. Also, the electronic system includes means for temporarily sealing the second chamber. Preferably, means for temporarily sealing the second chamber includes a detachable plug configured for coupling to the second housing element.

Abstract: An automatic system for monitoring chemistry information for a body of water comprises a sensor for determining chemistry information, a microprocessor for processing chemistry information, and a housing coupled to at least one of the sensor and the microprocessor. Preferably the housing is floatable or mountable. The method of providing chemistry information of a body of water comprising the steps of obtaining a sample of the body of water and determining chemistry information.

Abstract: A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.

Abstract: A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about ?70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

Abstract: A method of depositing a metal film on a substrate includes a supercritical preclean step, a supercritical desorb step, and a metal deposition step. Preferably, the preclean step includes maintaining supercritical carbon dioxide and a chelating agent in contact with the substrate in order to remove an oxide layer from a metal surface of the substrate. More preferably, the preclean step includes maintaining the supercritical carbon dioxide, the chelating agent, and an acid in contact with the substrate. Alternatively, the preclean step includes maintaining the supercritical carbon dioxide and an amine in contact with the oxide layer. The desorb step includes maintaining supercritical carbon dioxide in contact with the substrate in order to remove adsorbed material from the substrate.

Abstract: A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.

Abstract: A method of depositing a metal film on a substrate includes a supercritical preclean step, a supercritical desorb step, and a metal deposition step. Preferably, the preclean step comprises maintaining supercritical carbon dioxide and a chelating agent in contact with the substrate in order to remove an oxide layer from a metal surface of the substrate. More preferably, the preclean step comprises maintaining the supercritical carbon dioxide, the chelating agent, and an acid in contact with the substrate. Alternatively, the preclean step comprises maintaining the supercritical carbon dioxide and an amine in contact with the oxide layer. The desorb step comprises maintaining supercritical carbon dioxide in contact with the substrate in order to remove adsorbed material from the substrate.

Abstract: A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

Abstract: A method of removing photoresist and residue from a substrate begins by maintaining supercritical carbon dioxide, an amine, and a solvent in contact with the substrate so that the amine and the solvent at least partially dissolve the photoresist and the residue. Preferably, the amine is a tertiary amine. Preferably, the solvent is selected from the group consisting of DMSO, EC, NMP, acetyl acetone, BLO, acetic acid, DMAC, PC, and a mixture thereof. Next, the photoresist and the residue are removed from the vicinity of the substrate. Preferably, the method continues with a rinsing step in which the substrate is rinsed in the supercritical carbon dioxide and a rinse agent. Preferably, the rinse agent is selected from the group consisting of water, alcohol, a mixture thereof, and acetone. In an alternative embodiment, the amine and the solvent are replaced with an aqueous fluoride.

Abstract: A high pressure chamber for processing of a semiconductor substrate comprises a high pressure processing cavity, a plurality of injection nozzles, and first and second outlet ports. The high pressure processing cavity holds the semiconductor substrate during high pressure processing. The plurality of injection nozzles are oriented into the high pressure processing cavity at a vortex angle and are operable to produce a vortex over a surface of the semiconductor substrate. The first and second outlet ports are located proximate to a center of the plurality of injection nozzles and are operable in a first time segment to provide an operating outlet out of the first outlet port and operable in a second time segment to provide the operating outlet out of the second outlet port. In an alternative embodiment, an upper surface of the high pressure processing cavity comprises a height variation. The height variation produces more uniform molecular speeds for a process fluid flowing over the semiconductor substrate.