Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.