Abstract: A method for producing a boron emitter on at least one silicon wafer, arranged in a tube furnace, including: a step for forming borosilicate glass on the silicon wafer, including in the sequence given: a) evacuating the tube furnace to a specified pressure, b) feeding reagents, having BCU and O2, into the tube furnace and adjusting to a further specified pressure, c) stopping the supply after expiry of a specified period and allowing the reagents supplied to react with each other and a surface of the silicon wafer for a specified period to form a layer of borosilicate glass on the surface of the silicon wafer, and d) evacuating the tube furnace on expiry of the specified period.