Abstract: A method for producing a ferroelectric layer or antiferroelectric layer in which a layer of a paraelectric material already deposited on a surface of a substrate with a layer thickness of at least two crystallographic unit cells is introduced into an alternating electric field. The alternating electric field is repeatedly cycled between a positive electric field strength and a negative electric field strength of amplitude greater than the coercivity field strength of the material such that the layer of paraelectric material forms a polarization.

Abstract: An electronic component with at least one layer of a ferroelectric or antiferroelectric material. The layer may be provided for setting an imprint with a chemical element as a dopant which has a different number of free outer electrons than a non-oxide element of the ferroelectric or antiferroelectric material, and is introduced into the layer in a locally inhomogeneous distribution.

Abstract: A resistor network and an integrated circuit at least part of the resistor network may have at least two memory cells for storing in each case one resistance characteristic value. Each memory cell may have a first contact pair configured to provide an electrical resistance corresponding to the stored resistance characteristic value in at least one operating mode. First contacts of the respective first contact pair of the two memory cells are directly connected to one another and second contacts of the respective first contact pair of the two memory cells are electrically independent of one another. The memory cells may each have a second contact pair which is electrically independent of the first contact pair and which is arranged in such a way that the stored electrical resistance characteristic value of the respective memory cell can be reversibly changed by suitable electrical signals via this second contact pair.

Abstract: Memory cells include various versions of a capacitor structure including a polarization retention member. Each polarization retention member includes an antiferroelectric layer over a ferroelectric layer. The antiferroelectric layer, among other layers, can be tailored to customize the hysteresis loop shape, and the coercive electric field required to change polarization of the memory cell. Metal electrodes, and/or dielectric or metallic interlayers may also be employed to tailor the hysteresis. The memory cells can include FeRAMs or FeFETs. The memory cells provide a lower coercive electric field requirement compared to conventional ferroelectric memory cells, enhanced reliability, and require minimum changes to integrate into current integrated circuit fabrication processes.

Abstract: In a laser pump arrangement for a laser medium that amplifies a laser beam, comprising at least one laser pump source (1?) with a plurality of emitters for generating partial pumping streams (TPS1?, TPS2?), the partial pumping streams (TPS1?, TPS2?) are led through a coupling optic to a homogenizer (3?) and then are thoroughly mixed in one axis through multiple reflections. In the process, the homogenizer (3?) and the laser medium are designed and disposed such that the pump stream exiting the homogenizer (3?) is led directly onto or into the laser medium while maintaining divergence in the mixing axis (DA), wherein the partial pumping streams (TPS1?, TPS2?) are projected, in particular focused, directly onto or into the laser medium in a projection axis (PA) that is perpendicular to the mixing axis (DA).

Abstract: In a laser pump arrangement for a laser medium that amplifies a laser beam, comprising at least one laser pump source (1?) with a plurality of emitters for generating partial pumping streams (TPS1?, TPS2?), the partial pumping streams (TPS1?, TPS2?) are led through a coupling optic to a homogenizer (3?) and then are thoroughly mixed in one axis through multiple reflections. In the process, the homogenizer (3?) and the laser medium are designed and disposed such that the pump stream exiting the homogenizer (3?) is led directly onto or into the laser medium while maintaining divergence in the mixing axis (DA), wherein the partial pumping streams (TPS1?, TPS2?) are projected, in particular focused, directly onto or into the laser medium in a projection axis (PA) that is perpendicular to the mixing axis (DA).

Abstract: The invention relates to a high-repetition laser system for generating ultra-short pulses according to the principle of pulse decoupling according to the precharacterizing clause of claim 1 and a use of the laser system.

Abstract: The invention relates to a highly repetitive laser system operating according to the reproducible amplifier principle. Said system comprises at least one amplified laser medium, a laser resonator provided with at least one resonator mirror and at least one modulator and a pump source, in particular, a laser diode source, which is used to pump the laser medium. The highly repetitive laser system is compact by virtue of the fact that a pulse extensor, having a highly dispersive effect as a result of the structure or material thereof, is integrated into the laser resonator.

Abstract: A pulse train generator for generating laser pulses comprises a laser setup with a cavity, an electro-optic switch for switching the pulses in and out from the cavity. The electro-optic switch and a control element are designed and connected for switching out laser pulses with a first repetition rate thereby forming a sequence of laser pulses. Said sequence of laser pulses is repeated with a second repetition rate, thereby forming a repeating sequence of laser pulses. A potential function with at least two steps or a switch setup with two electro-optic modulators are used to operate the setup with the second repetition rate.

Abstract: In a laser system with optical parametric amplifier (8), a laser source (1) for generating seed pulses, and a regenerative amplifier (2) for generating pump pulses, the seed pulses of laser source (1) are coupled, both into the regenerative amplifier (2) and into the optical parametric amplifier (8). Moreover, the auxiliary beam (HS) generated in the optical parametric amplifier (8) is passed through an arrangement with positive dispersion (14) so that, in view of the inverted chirp of the auxiliary beam (HS), the pulses are recompressed. A pulse stretcher can also be used as an arrangement with positive dispersion for recompression of the auxiliary beam (HS), so that a further component can be omitted.

Abstract: By forming a laser element by embedding a laser-active medium in components of a heat-conducting crystalline material, an improved cooling effect can be achieved. As far as possible loss-free passage of the beam is achieved by a suitable orientation of interfaces and/or the use of antireflection coats or coatings.