Patents by Inventor Maximilian Schultz

Maximilian Schultz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Microelectronic circuit structure having improved structural fineness and method for manufacturing same
    Patent number: 5606190
    Abstract: A microelectronic circuit structure has a semiconductor layer and a dielectric layer that are arranged neighboring one another. The dielectric layer comprises a charge distribution localized close to the boundary surface to the semiconductor layer which effects a shift of the local semiconductor surface potential in the semiconductor layer. The charge distribution, in particular, is non-uniform in the plane parallel to the boundary surface to the semiconductor layer so that the shift of the local semiconductor surface potential is effected in a limited region. Structures having dimensions down to 10 nm can thereby be produced by driving charge carriers into the dielectric layer in the electrical field between a pointed metal tip and the semiconductor layer.
    Type: Grant
    Filed: May 19, 1994
    Date of Patent: February 25, 1997
    Assignee: Siemens Aktiengesellschaft
    Inventors: Karl Hofmann, Maximilian Schultz