Patents by Inventor Maximilian Stadler
Maximilian Stadler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230375670Abstract: An apparatus for sensing surroundings of a motor vehicle includes a laser sensing device for sensing surroundings of the motor vehicle, a mount which is fixedly connected to the sensing device and is designed to attach the sensing device to a body of the motor vehicle, and an outer skin component. The mount and the outer skin component each have an end face which faces the other end face. A method is provided for producing a surroundings sensing apparatus by use of laser transmission welding.Type: ApplicationFiled: November 4, 2021Publication date: November 23, 2023Inventors: Thomas RABL, Maximilian STADLER
-
Patent number: 9815231Abstract: A method for manufacturing a breast prosthesis, in which a film bag is welded together from at least three film layers for producing at least two chambers.Type: GrantFiled: April 29, 2015Date of Patent: November 14, 2017Assignee: AMOENA MEDIZIN-ORTHOPADE-TECHNIK GMBHInventor: Maximilian Stadler
-
Publication number: 20150314493Abstract: A method for manufacturing a breast prosthesis, in which a film bag is welded together from at least three film layers for producing at least two chambers.Type: ApplicationFiled: April 29, 2015Publication date: November 5, 2015Inventor: Maximilian Stadler
-
Patent number: 7972963Abstract: A polished semiconductor wafer has a front surface and a back surface and an edge R, which is located at a distance of a radius from a center of the semiconductor wafer, forms a periphery of the semiconductor wafer and is part of a profiled boundary of the semiconductor wafer. The maximum deviation of the flatness of the back surface from an ideal plane in a range between R-6 mm and R-1 mm of the back surface is 0.7 ?m or less. A process for producing the semiconductor wafer, comprises at least one treatment of the semiconductor wafer with a liquid etchant and at least one polishing of at least a front surface of the semiconductor wafer, the etchant flowing onto a boundary of the semiconductor wafer during the treatment, and the boundary of the semiconductor wafer which faces the flow of etchant being at least partially shielded from being struck directly by the etchant. The shielding extends in the direction of a thickness d of the semiconductor wafer and is at least d+100 ?m long.Type: GrantFiled: October 11, 2007Date of Patent: July 5, 2011Assignee: Siltronic AGInventors: Thomas Teuschler, Guenter Schwab, Maximilian Stadler
-
Publication number: 20100290973Abstract: A method for providing liquid silicon comprising the method steps of filling (10) at least one crucible (50; 50a, 50b, 50c, 50d) with solid silicon (52), melting (12) the solid silicon (52) situated in the at least one crucible (50; 50a, 50b, 50c, 50d), and feeding (14; 24) liquid silicon (58) to the silicon (54) situated in the at least one crucible (50; 50a, 50b, 50c, 50d), and a device for carrying out the method.Type: ApplicationFiled: May 12, 2010Publication date: November 18, 2010Applicant: CENTROTHERM SITEC GMBHInventors: Alrbrecht Mozer, Maximilian Stadler
-
Patent number: 7829467Abstract: Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps: a mechanical processing step, an etching step in which the semiconductor wafers are oxidized and material is removed from the front side of the wafers with the aid of a gaseous etchant containing hydrofluoric acid at a temperature of 20 to 70° C., and a polishing step in which the front side of the semiconductor wafer is polished, the processing steps in which the front side of the semiconductor wafer is polished causing material removal which does not amount to more than 5 ?m in total.Type: GrantFiled: May 4, 2007Date of Patent: November 9, 2010Assignee: Siltronic AGInventors: Maximilian Stadler, Günter Schwab, Diego Feijóo, Karlheinz Langsdorf
-
Publication number: 20080057714Abstract: A polished semiconductor wafer has a front surface and a back surface and an edge R, which is located at a distance of a radius from a center of the semiconductor wafer, forms a periphery of the semiconductor wafer and is part of a profiled boundary of the semiconductor wafer. The maximum deviation of the flatness of the back surface from an ideal plane in a range between R-6 mm and R-1 mm of the back surface is 0.7 ?m or less. A process for producing the semiconductor wafer, comprises at least one treatment of the semiconductor wafer with a liquid etchant and at least one polishing of at least a front surface of the semiconductor wafer, the etchant flowing onto a boundary of the semiconductor wafer during the treatment, and the boundary of the semiconductor wafer which faces the flow of etchant being at least partially shielded from being struck directly by the etchant. The shielding extends in the direction of a thickness d of the semiconductor wafer and is at least d+100 ?m long.Type: ApplicationFiled: October 11, 2007Publication date: March 6, 2008Applicant: Siltronic AGInventors: Thomas Teuschler, Guenter Schwab, Maximilian Stadler
-
Publication number: 20070259531Abstract: Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps: a mechanical processing step, an etching step in which the semiconductor wafers are oxidized and material is removed from the front side of the wafers with the aid of a gaseous etchant containing hydrofluoric acid at a temperature of 20 to 70° C., and a polishing step in which the front side of the semiconductor wafer is polished, the processing steps in which the front side of the semiconductor wafer is polished causing material removal which does not amount to more than 5 ?m in total.Type: ApplicationFiled: May 4, 2007Publication date: November 8, 2007Applicant: SILTRONIC AGInventors: Maximilian Stadler, Gunter Schwab, Diego Feijoo, Karlheinz Langsdorf
-
Patent number: 7083741Abstract: A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NOx) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NOx) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.Type: GrantFiled: October 15, 2003Date of Patent: August 1, 2006Assignee: Siltronic AGInventors: Maximilian Stadler, Günter Schwab, Helmut Franke
-
Publication number: 20060138539Abstract: A process for treating a semiconductor wafer with a gaseous medium containing hydrogen fluoride and at least one oxidizing agent which oxidizes the surface of the semiconductor wafer, involves flowing the gaseous medium onto the surface of the semiconductor wafer at a relative velocity in the range from 40 mm/s to 300 m/s. Semiconductor wafers and an SOI wafers prepared by the process have a low roughness and metal concentration in the absence of a subsequent polishing step.Type: ApplicationFiled: December 21, 2005Publication date: June 29, 2006Applicant: Siltronic AGInventors: Maximilian Stadler, Guenter Schwab, Christoph Frey, Peter Stallhofer
-
Publication number: 20040266191Abstract: A process for the wet-chemical surface treatment of a semiconductor wafer has the semiconductor wafer being treated with an acidic liquid, with at most 10 &mgr;m of material being removed from each surface of the semiconductor wafer, and then this wafer is treated with an alkaline liquid, with at least sufficient material being removed for the crystal regions which have been damaged by a previous mechanical treatment to be completely removed.Type: ApplicationFiled: June 25, 2004Publication date: December 30, 2004Inventors: Gunter Schwab, Helmut Franke, Helmut Paltzer, Manfred Schofberger, Maximilian Stadler
-
Publication number: 20040222416Abstract: A polished semiconductor wafer has a front surface and a back surface and an edge R, which is located at a distance of a radius from a center of the semiconductor wafer, forms a periphery of the semiconductor wafer and is part of a profiled boundary of the semiconductor wafer. The maximum deviation of the flatness of the back surface from an ideal plane in a range between R-6 mm and R-1 mm of the back surface is 0.7 &mgr;m or less. A process for producing the semiconductor wafer, comprises at least one treatment of the semiconductor wafer with a liquid etchant and at least one polishing of at least a front surface of the semiconductor wafer, the etchant flowing onto a boundary of the semiconductor wafer during the treatment, and the boundary of the semiconductor wafer which faces the flow of etchant being at least partially shielded from being struck directly by the etchant. The shielding extends in the direction of a thickness d of the semiconductor wafer and is at least d+100 &mgr;m long.Type: ApplicationFiled: January 21, 2004Publication date: November 11, 2004Inventors: Thomas Teuschler, Gunter Schwab, Maximilian Stadler
-
Publication number: 20040129679Abstract: A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NOx) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NOx) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.Type: ApplicationFiled: October 15, 2003Publication date: July 8, 2004Inventors: Maximilian Stadler, Gunter Schwab, Helmut Franke
-
Patent number: 6610213Abstract: A process for the wet chemical treatment of a semiconductor wafer in a vessel, in which the semiconductor wafer is brought into contact with a liquid in which very small gas bubbles are dispersed. Two circuits are set up for conveying the liquid, with a first circuit between a reservoir and the vessel, for conveying the liquid from the reservoir to the vessel; and with a second circuit from the reservoir back to the reservoir, in order to enrich the liquid with a gas on the way back to the reservoir, so that the gas bubbles can form.Type: GrantFiled: May 19, 2000Date of Patent: August 26, 2003Assignee: Wacker Siltronic Gesellschaft für HalbleitermaterialienInventors: Günter Schwab, Maximilian Stadler
-
Patent number: 6530381Abstract: A process for the wet-chemical surface treatment of a semiconductor wafer following a mechanical surface treatment, in particular following a mechanical surface treatment in a lapping machine, includes a sequence of treatment steps. The process essentially includes a wet-chemical surface cleaning, preferably for neutralizing and eliminating the lapping slurry, an acid etching treatment, preferably for eliminating the mechanically imposed damage and for surface smoothing and removal of metals. There is a final step of drying and rendering the cleaned and etched surface hydrophilic.Type: GrantFiled: November 2, 2000Date of Patent: March 11, 2003Assignee: Wacker Siltronic Gesellschaft Für Halbleitermaterialien AGInventors: Günter Schwab, Karlheinz Langsdorf, Maximilian Stadler, Edeltraut Pichelmeier
-
Patent number: 5587046Abstract: A process for treating semiconductor material with an acid-containing fluid, has water being formed as a product of a chemical reaction. Before and/or during the treatment of the semiconductor material, phosphorus pentoxide is added to the acid-containing fluid.Type: GrantFiled: April 10, 1995Date of Patent: December 24, 1996Assignee: Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AktiengesellschaftInventors: Maximilian Stadler, Gunter Schwab, Peter Romeder, Gabriele Trifellner
-
Patent number: 5236548Abstract: A magazine is provided for holding disk-type workpieces, in particular seonductor wafers, in the wet-chemical surface treatment in liquid baths. The magazine is particularly useful for etching semiconductor wafers in a liquid bath, which contains an insert (5) which has a diameter of 1.1-1.9 times the diameter of the wafer (6) and which has arrangements of guide strut assemblies (12) held parallel at a spacing of at least twice the wafer thickness by spacing struts (8). The guide strut assemblies (12) comprise main guide struts (9) and subsidiary guide struts (10) which diverge at the linking points (13), which do not lie on the housing axis, in not more than three directions. This etching magazine makes possible a marked reduction in the deterioration in the wafer geometry normally observed in etching treatments.Type: GrantFiled: January 21, 1992Date of Patent: August 17, 1993Assignee: Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe mbHInventors: Maximilian Stadler, Schwab Gunter, Peter Romeder