Patents by Inventor Maximillian Gebhard

Maximillian Gebhard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer deposition of fluoride thin films
    Patent number: 11111578
    Abstract: A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: September 7, 2021
    Assignee: UChicago Argonne, LLC
    Inventors: Jeffrey W. Elam, Anil U. Mane, Maximillian Gebhard
  • ATOMIC LAYER DEPOSITION OF FLUORIDE THIN FILMS
    Publication number: 20210254209
    Abstract: A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.
    Type: Application
    Filed: February 13, 2020
    Publication date: August 19, 2021
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Jeffrey W. Elam, Anil U. Mane, Maximillian Gebhard