Patents by Inventor Maybe Chen

Maybe Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell including programmable resistors with transistor components
    Patent number: 11646079
    Abstract: Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.
    Type: Grant
    Filed: June 3, 2021
    Date of Patent: May 9, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Der Chih, Maybe Chen, Yun-Sheng Chen, Wen Zhang Lin, Jonathan Tsung-Yung Chang, Chrong Jung Lin, Ya-Chin King, Hsin-Yuan Yu
  • Memory Cell Including Programmable Resistors With Transistor Components
    Publication number: 20220068378
    Abstract: Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.
    Type: Application
    Filed: June 3, 2021
    Publication date: March 3, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Der Chih, Maybe Chen, Yun-Sheng Chen, Wen Zhang Lin, Jonathan Tsung-Yung Chang, Chrong Jung Lin, Ya-Chin King, Hsin-Yuan Yu