Patents by Inventor May-Ling Chu

May-Ling Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for enhancing sheet resistance uniformity of chemical vapor deposited (CVD) tungsten silicide layers
    Patent number: 6127269
    Abstract: A chemical vapor deposition (CVD) method for forming with enhanced sheet resistance uniformity tungsten silicide layers upon substrates. There is formed upon a first substrate within a chemical vapor deposition (CVD) reactor chamber a first tungsten silicide layer through a chemical vapor deposition (CVD) method. The first substrate is then removed from the chemical vapor deposition (CVD) reactor chamber. The chemical vapor deposition (CVD) reactor chamber is then cleaned with a fluorine containing plasma and subsequently purged with a mixture of silane and an inert gas. There may then be formed with enhanced sheet resistance uniformity upon a second substrate within the chemical vapor deposition (CVD) reactor chamber a second tungsten silicide layer through the chemical vapor deposition (CVD) method.
    Type: Grant
    Filed: November 12, 1996
    Date of Patent: October 3, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yung-Haw Liaw, May-Ling Chu