Patents by Inventor May Yuxiang Wang

May Yuxiang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mixed frequency high temperature nitride CVD process
    Patent number: 6664202
    Abstract: A mixed-frequency, high temperature PECVD process is utilized to create a high quality silicon nitride layer having highly conformal properties. Deposition in an ammonia rich ambient at high temperature reduces microloading between dense and isolated features by improving surface mobility of precursors. High quality nitride films formed by the instant process are particularly suited for front-end applications such as the formation of spacer structures and the formation of contact etch stop layers.
    Type: Grant
    Filed: April 18, 2002
    Date of Patent: December 16, 2003
    Assignee: Applied Materials Inc.
    Inventors: Sum-Yee Tang, May Yuxiang Wang, Lester A. D'Cruz
  • MIXED FREQUENCY HIGH TEMPERATURE NITRIDE CVD PROCESS
    Publication number: 20030199175
    Abstract: A mixed-frequency, high temperature PECVD process is utilized to create a high quality silicon nitride layer having highly conformal properties. Deposition in an ammonia rich ambient at high temperature reduces microloading between dense and isolated features by improving surface mobility of precursors. High quality nitride films formed by the instant process are particularly suited for front-end applications such as the formation of spacer structures and the formation of contact etch stop layers.
    Type: Application
    Filed: April 18, 2002
    Publication date: October 23, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Sum-Yee Tang, May Yuxiang Wang, Lester A. D'Cruz