Patents by Inventor Maya Angelova Doytcheva
Maya Angelova Doytcheva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8980724Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: GrantFiled: March 10, 2014Date of Patent: March 17, 2015Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Publication number: 20140192333Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: ApplicationFiled: March 10, 2014Publication date: July 10, 2014Applicants: ASML Netherlands B.V., ASML Holding N.VInventors: Harry SEWELL, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Patent number: 8709908Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: GrantFiled: March 16, 2010Date of Patent: April 29, 2014Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Patent number: 8625096Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.Type: GrantFiled: March 24, 2010Date of Patent: January 7, 2014Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Publication number: 20130070226Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.Type: ApplicationFiled: November 15, 2012Publication date: March 21, 2013Applicant: ASML NETHERLANDS B.V.Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva
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Publication number: 20130017378Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.Type: ApplicationFiled: September 14, 2012Publication date: January 17, 2013Applicant: ASML Netherlands B.V.Inventors: Maya Angelova Doytcheva, Mircea Dusa, Richard Johannes Franciscus Van Haren, Harry Sewell, Robertus Wilhelmus Van Der Heijden
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Patent number: 8329366Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.Type: GrantFiled: April 27, 2010Date of Patent: December 11, 2012Assignees: ASML Netherlands B.V., ASML Holding N.V.Inventors: Maya Angelova Doytcheva, Mircea Dusa, Richard Johannes Franciscus Van Haren, Harry Sewell, Robertus Wilhelmus Van Der Heijden
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Patent number: 8319967Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.Type: GrantFiled: December 4, 2008Date of Patent: November 27, 2012Assignee: ASML Netherlands B.V.Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva
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Publication number: 20110075238Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.Type: ApplicationFiled: March 24, 2010Publication date: March 31, 2011Applicant: ASML Netherlands B.V.Inventors: Harry SEWELL, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Publication number: 20100323171Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.Type: ApplicationFiled: April 27, 2010Publication date: December 23, 2010Applicants: ASML Holding N.V., ASML Netherlands B.V.Inventors: Maya Angelova DOYTCHEVA, Mircea Dusa, Richard Johannes Franciscus Van Haren, Harry Sewell, Robertus Wilhelmus Van Der Heijden
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Publication number: 20100301458Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The day may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: ApplicationFiled: March 16, 2010Publication date: December 2, 2010Applicants: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Publication number: 20090147232Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.Type: ApplicationFiled: December 4, 2008Publication date: June 11, 2009Applicant: ASML NETHERLANDS B.V.Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva
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Patent number: 6600260Abstract: A gas discharge lamp fitted with a gas discharge vessel filled with a gas filling is suitable for a gas discharge which emits VUV radiation, with a luminophore coating containing a down conversion luminophore and with means for igniting and maintaining a gas discharge in which the down conversion luminophore has in a host lattice a pair of activators of the a first lanthanoid ion and a second lanthanoid ion and a sensitizer selected from the group of the copper (I) ion, silver (I) ion, gold (I) ion, zinc (II) ion, gallium (III) ion, indium (III) ion, thallium (III) ion, germanium (IV) ion, tin (IV) ion and lead (IV) ion, is environmentally friendly and has a high lamp efficiency &eegr;lamp.Type: GrantFiled: April 25, 2002Date of Patent: July 29, 2003Assignee: Koninklijke Philips Electronics N.V.Inventors: Claus Feldmann, Maya Angelova Doytcheva, Cornelis Reinder Ronda, Thomas Jüstel
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Publication number: 20020175616Abstract: A gas discharge lamp fitted with a gas discharge vessel filled with a gas filling is suitable for a gas discharge which emits VUV radiation, with a luminophore coating containing a down conversion luminophore and with means for igniting and maintaining a gas discharge in which the down conversion luminophore has in a host lattice a pair of activators of the a first lanthanoid ion and a second lanthanoid ion and a sensitizer selected from the group of the copper (I) ion, silver (I) ion, gold (I) ion, zinc (II) ion, gallium (III) ion, indium (III) ion, thallium (III) ion, germanium (IV) ion, tin (IV) ion and lead (IV) ion, is environmentally friendly and has a high lamp efficiency &eegr;lamp.Type: ApplicationFiled: April 25, 2002Publication date: November 28, 2002Inventors: Claus Feldmann, Maya Angelova Doytcheva, Cornelis Reinder Ronda, Thomas Justel