Patents by Inventor Maya Angelova Doytcheva

Maya Angelova Doytcheva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8980724
    Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: March 17, 2015
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Publication number: 20140192333
    Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
    Type: Application
    Filed: March 10, 2014
    Publication date: July 10, 2014
    Applicants: ASML Netherlands B.V., ASML Holding N.V
    Inventors: Harry SEWELL, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Patent number: 8709908
    Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: April 29, 2014
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Patent number: 8625096
    Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: January 7, 2014
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Publication number: 20130070226
    Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
    Type: Application
    Filed: November 15, 2012
    Publication date: March 21, 2013
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva
  • Publication number: 20130017378
    Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 17, 2013
    Applicant: ASML Netherlands B.V.
    Inventors: Maya Angelova Doytcheva, Mircea Dusa, Richard Johannes Franciscus Van Haren, Harry Sewell, Robertus Wilhelmus Van Der Heijden
  • Patent number: 8329366
    Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: December 11, 2012
    Assignees: ASML Netherlands B.V., ASML Holding N.V.
    Inventors: Maya Angelova Doytcheva, Mircea Dusa, Richard Johannes Franciscus Van Haren, Harry Sewell, Robertus Wilhelmus Van Der Heijden
  • Patent number: 8319967
    Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: November 27, 2012
    Assignee: ASML Netherlands B.V.
    Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva
  • Publication number: 20110075238
    Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.
    Type: Application
    Filed: March 24, 2010
    Publication date: March 31, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Harry SEWELL, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Publication number: 20100323171
    Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.
    Type: Application
    Filed: April 27, 2010
    Publication date: December 23, 2010
    Applicants: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Maya Angelova DOYTCHEVA, Mircea Dusa, Richard Johannes Franciscus Van Haren, Harry Sewell, Robertus Wilhelmus Van Der Heijden
  • Publication number: 20100301458
    Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The day may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
    Type: Application
    Filed: March 16, 2010
    Publication date: December 2, 2010
    Applicants: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Publication number: 20090147232
    Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
    Type: Application
    Filed: December 4, 2008
    Publication date: June 11, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva
  • Patent number: 6600260
    Abstract: A gas discharge lamp fitted with a gas discharge vessel filled with a gas filling is suitable for a gas discharge which emits VUV radiation, with a luminophore coating containing a down conversion luminophore and with means for igniting and maintaining a gas discharge in which the down conversion luminophore has in a host lattice a pair of activators of the a first lanthanoid ion and a second lanthanoid ion and a sensitizer selected from the group of the copper (I) ion, silver (I) ion, gold (I) ion, zinc (II) ion, gallium (III) ion, indium (III) ion, thallium (III) ion, germanium (IV) ion, tin (IV) ion and lead (IV) ion, is environmentally friendly and has a high lamp efficiency &eegr;lamp.
    Type: Grant
    Filed: April 25, 2002
    Date of Patent: July 29, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Claus Feldmann, Maya Angelova Doytcheva, Cornelis Reinder Ronda, Thomas J├╝stel
  • Publication number: 20020175616
    Abstract: A gas discharge lamp fitted with a gas discharge vessel filled with a gas filling is suitable for a gas discharge which emits VUV radiation, with a luminophore coating containing a down conversion luminophore and with means for igniting and maintaining a gas discharge in which the down conversion luminophore has in a host lattice a pair of activators of the a first lanthanoid ion and a second lanthanoid ion and a sensitizer selected from the group of the copper (I) ion, silver (I) ion, gold (I) ion, zinc (II) ion, gallium (III) ion, indium (III) ion, thallium (III) ion, germanium (IV) ion, tin (IV) ion and lead (IV) ion, is environmentally friendly and has a high lamp efficiency &eegr;lamp.
    Type: Application
    Filed: April 25, 2002
    Publication date: November 28, 2002
    Inventors: Claus Feldmann, Maya Angelova Doytcheva, Cornelis Reinder Ronda, Thomas Justel