Abstract: A temperature control system 10 is used to control the temperature of a chamber surface 15, such as a convoluted external surface, of a process chamber 25 that is used to process a semiconductor substrate 30. The temperature control system 10 comprises a vapor chamber 100 that forms an enclosure adjoining or surrounding the process chamber surface 15. A fluid distributor 115 in the vapor chamber 100 applies a fluid film 130 onto the process chamber surface 15. Vaporization of the fluid film 130 from the chamber surface 15 controls the temperature of the chamber surface. Optionally, a vent 165 in the vapor chamber 100 can be used to adjust the vaporization temperature of the fluid in the vapor chamber.

Abstract: Apparatus for retaining a workpiece in a semiconductor wafer processing system. The apparatus has a collector positioned between an electrostatic chuck pedestal and the floor of the processing chamber. The collector has inlet and exhaust control valves connected to inlet and exhaust ports for providing and expelling a backside heat transfer gas (e.g., Helium). Heat transfer exhaust cavities in the collector are connected to the exhaust port to rapidly draw the gas off the backside of the wafer. Additionally, control of the heat transfer gas layer uniformity during processing is achieved by opening and closing the valves to the inlet and exhaust ports as required.

Abstract: An improved plasma etching apparatus is disclosed for the plasma etching of semiconductor wafers. The improvement includes conductive means for inhibiting arcing from electrical charges accumulating on one or more non-conductive protective surfaces on members at rf potential within the apparatus, such as the metal pedestal which supports the wafer being etched and supplies the rf potential to it, and the clamping ring mechanism which clamps the wafer to the pedestal. The conductive means may include one or more conductive plugs extending through one or more of the protective surfaces or a conductive ring surrounding the wafer on the top surface of the metal pedestal. The conductive material is selected from the class consisting of carbon; a silicide; titanium nitride; a carbide; and a semiconductor such as silicon doped to provide a resistivity ranging from about 0.001 to about 20 ohm-cm.