Abstract: A method of identifying a hidden anomaly in a stream of time-series data. The stream of time-series data is parsed into a number of sub-streams. Each sub-stream in the number of sub-streams includes a parameter in a number of parameters. A number of policies are executed on the number of sub-streams. Executing outputs a first set of values in a current time window for each of the number of sub-streams. For the each sub-stream, a corresponding difference determination is generated by comparing, for the each sub-stream, the first set of values in the current time window to a second set of values in a past time window for the each sub-stream. When, for a sub-stream, a difference determination satisfies a threshold, an alert is returned that the hidden anomaly occurred with respect to the parameter for the selected sub-stream.

Abstract: An improved FinFET has a gate structure on only a portion of the available surface on a fin, thereby providing a FinFET with a finer granularity width dimension. To form the FinFET, a first etch-resistant sacrificial layer and a second etch-resistant spacer layer are formed on the fin. The spacer layer is etched anisotropically to remove the spacer layer from the top and upper sidewalls of the fin while leaving the spacer layer on the lower sidewalls of the FinFET. A gate dielectric and conducting layer are then deposited and shaped to form a structure that is effective as a gate only on the top and upper sidewalls of the fin.

Abstract: Systems, methods, and non-transitory computer-readable media can identify a content item within a social networking system for which a reminder is to be provided. A selection specifying one or more conditions for providing the reminder can be received. It can be determined that the one or more conditions are satisfied. The reminder can be provided via a notification within the social networking system when the one or more conditions are satisfied. The content item can be accessible via the reminder.

Abstract: An improved FinFET has a gate structure on only a portion of the available surface on a fin, thereby providing a FinFET with a finer granularity width dimension. To form the FinFET, a first etch-resistant sacrificial layer and a second etch-resistant spacer layer are formed on the fin. The spacer layer is etched anisotropically to remove the spacer layer from the top and upper sidewalls of the fin while leaving the spacer layer on the lower sidewalls of the FinFET. A gate dielectric and conducting layer are then deposited and shaped to form a structure that is effective as a gate only on the top and upper sidewalls of the fin.