Patents by Inventor Maykel Ghorbanzadeh

Maykel Ghorbanzadeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10510741
    Abstract: A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed over the semiconductor die. In one embodiment, the capacitor is formed by depositing a first conductive layer over the semiconductor die, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the semiconductor die. In another embodiment, the capacitor is formed by forming a trench in the semiconductor die, depositing an insulating material in the trench, and depositing a conductive material in the trench.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: December 17, 2019
    Assignee: Semtech Corporation
    Inventors: Maykel Ghorbanzadeh, Jonathan Clark, William A. Russell
  • Publication number: 20180102356
    Abstract: A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed over the semiconductor die. In one embodiment, the capacitor is formed by depositing a first conductive layer over the semiconductor die, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the semiconductor die. In another embodiment, the capacitor is formed by forming a trench in the semiconductor die, depositing an insulating material in the trench, and depositing a conductive material in the trench.
    Type: Application
    Filed: September 29, 2017
    Publication date: April 12, 2018
    Applicant: Semtech Corporation
    Inventors: Maykel Ghorbanzadeh, Jonathan Clark, William A. Russell