Patents by Inventor Mayo UDA

Mayo UDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11348768
    Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: May 31, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda
  • Publication number: 20210320009
    Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 14, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
  • Publication number: 20210193439
    Abstract: A plasma processing apparatus includes a chamber, an antenna assembly, a primary coil, a radio frequency (RF) power supply and a gas shower. The chamber includes a sidewall and a ceiling plate having a central opening. The the sidewall and the ceiling plate define a plasma processing space. The antenna assembly is disposed above the ceiling plate. The antenna assembly includes a central region, a first peripheral region surrounding the central region, and a second peripheral region surrounding the first peripheral region. The central region and the first peripheral region vertically overlap the central opening. The primary coil is disposed in the second peripheral region. The RF power supply is configured to supply an RF signal to the primary coil. The gas shower is disposed in the central opening and has a bottom portion exposed to the plasma processing space, the bottom portion having bottom gas injection holes.
    Type: Application
    Filed: December 22, 2020
    Publication date: June 24, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Mayo UDA, Mitsunori OHATA
  • Publication number: 20210166918
    Abstract: A plasma processing apparatus includes a chamber having a sidewall and a plasma processing space surrounded by the sidewall, and a first side gas inlet line and a second side gas inlet line configured to introduce at least one gas from the sidewall into the plasma processing space. The first side gas inlet line includes a plurality of first side gas injectors symmetrically arranged along a circumferential direction on the sidewall and configured to introduce the gas in a first direction into the plasma processing space. Further, the second side gas inlet line includes a plurality of second side gas injectors symmetrically arranged along the circumferential direction on the sidewall and configured to introduce the gas in a second direction different from the first direction into the plasma processing space.
    Type: Application
    Filed: November 27, 2020
    Publication date: June 3, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Mayo UDA, Manabu TSURUTA, Keigo TOYODA
  • Patent number: 10950467
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: March 16, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
  • Publication number: 20200266034
    Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.
    Type: Application
    Filed: May 7, 2020
    Publication date: August 20, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
  • Patent number: 10636683
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: April 28, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
  • Patent number: 10510514
    Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: December 17, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Mayo Uda, Takashi Kubo
  • Publication number: 20190131136
    Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
    Type: Application
    Filed: December 2, 2016
    Publication date: May 2, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
  • Publication number: 20190098740
    Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.
    Type: Application
    Filed: September 27, 2018
    Publication date: March 28, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yohei YAMAZAWA, Takehisa SAITO, Mayo UDA, Keigo TOYODA, Alok RANJAN, Toshiki NAKAJIMA
  • Publication number: 20170301518
    Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.
    Type: Application
    Filed: September 24, 2015
    Publication date: October 19, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Mayo UDA, Takashi KUBO
  • Publication number: 20170301568
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Application
    Filed: April 11, 2017
    Publication date: October 19, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA, Kenichi SHIMONO
  • Publication number: 20160260582
    Abstract: A baffle structure of a plasma processing apparatus includes a first member and at least one second member. The first member includes a cylindrical portion extending between a placement table and a processing container. A plurality of vertically elongated through holes are formed in the cylindrical portion to be arranged in the circumferential direction. The at least one second member is disposed in the outside of the cylindrical portion of the first member in the radial direction. The at least one second member is arranged to form a cylindrical body having an inner diameter larger than the outer diameter of the cylindrical portion. The vertical positions of a plurality of second members may be individually changed. Or, the horizontal position of a single second member may be changed. Or, the single second member may be made to be inclined.
    Type: Application
    Filed: February 29, 2016
    Publication date: September 8, 2016
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA