Abstract: A dopant material is disclosed. The dopant material comprises a polycrystalline silicon and a dopant element in the polycrystalline silicon. A concentration of the dopant element is at least 1×1018 atoms/cm3 and no greater than 1×1020 atoms/cm3. A method for producing a dopant material is also disclosed. A fused mixture is generated by mixing and fusing a silicon material with an element that serves as the dopant source. A coagulate of the dopant material is generated by cooling and coagulating the fused mixture. A semiconductor substrate is disclosed. The semiconductor substrate comprises a semiconductor material to which the dopant material is added. A solar cell element comprising the semiconductor substrate, a first electrode, and a second electrode is disclosed. The semiconductor substrate comprises a first surface and a second surface corresponding to a rear surface of the first surface.