Patents by Inventor Mayuka Iwasaki
Mayuka Iwasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8502145Abstract: The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.Type: GrantFiled: July 5, 2012Date of Patent: August 6, 2013Assignee: Hitachi High-Technologies CorporationInventors: Mayuka Iwasaki, Chie Shishido, Maki Tanaka
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Patent number: 8357897Abstract: A charged particle beam device enabling prevention of degradation of reproducibility of measurement caused by an increase of the beam diameter attributed to an image shift and having a function of dealing with device-to-device variation. The charged particle beam device is used for measuring the dimensions of a pattern on a specimen using a line profile obtained by detecting secondary charged particles emitted from the specimen when the specimen is scanned with a primary charged particle beam converged on the specimen. A lookup table in which the position of image shift and the variation of the beam diameter are associated is prepared in advance by actual measurement or calculation and registered. When the dimensions are measured, image processing is carried out so as to correct the line profile for the variation of the beam diameter while the lookup table is referenced, and thereby the situation where the beam diameter is effectively equal is produced irrespective of the position of the image shift.Type: GrantFiled: January 26, 2010Date of Patent: January 22, 2013Assignee: Hitachi High-Technologies CorporationInventors: Chie Shishido, Atsushi Miyamoto, Mayuka Iwasaki, Tomofumi Nishiura, Go Kotaki
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Publication number: 20120267529Abstract: The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.Type: ApplicationFiled: July 5, 2012Publication date: October 25, 2012Inventors: Mayuka Iwasaki, Chie Shishido, Maki Tanaka
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Patent number: 8217348Abstract: The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.Type: GrantFiled: January 16, 2009Date of Patent: July 10, 2012Assignee: Hitachi High-Technologies CorporationInventors: Mayuka Iwasaki, Chie Shishido, Maki Tanaka
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Publication number: 20120104254Abstract: A charged particle beam device enabling prevention of degradation of reproducibility of measurement caused by an increase of the beam diameter attributed to an image shift and having a function of dealing with device-to-device variation. The charged particle beam device is used for measuring the dimensions of a pattern on a specimen using a line profile obtained by detecting secondary charged particles emitted from the specimen when the specimen is scanned with a primary charged particle beam converged on the specimen. A lookup table in which the position of image shift and the variation of the beam diameter are associated is prepared in advance by actual measurement or calculation and registered. When the dimensions are measured, image processing is carried out so as to correct the line profile for the variation of the beam diameter while the lookup table is referenced, and thereby the situation where the beam diameter is effectively equal is produced irrespective of the position of the image shift.Type: ApplicationFiled: January 26, 2010Publication date: May 3, 2012Inventors: Chie Shishido, Atsushi Miyamoto, Mayuka Iwasaki, Tomofumi Nishiura, Go Kotaki
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Patent number: 7817860Abstract: Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.Type: GrantFiled: December 2, 2008Date of Patent: October 19, 2010Assignee: Hitachi High-Technologies CorporationInventors: Chie Shishido, Mayuka Iwasaki, Hiroki Kawada
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Publication number: 20090224152Abstract: Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.Type: ApplicationFiled: December 2, 2008Publication date: September 10, 2009Inventors: Chie SHISHIDO, Mayuka IWASAKI, Hiroki KAWADA
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Publication number: 20090212211Abstract: The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.Type: ApplicationFiled: January 16, 2009Publication date: August 27, 2009Inventors: Mayuka IWASAKI, Chie Shishido, Maki Tanaka
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Patent number: 7460714Abstract: Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.Type: GrantFiled: April 20, 2007Date of Patent: December 2, 2008Assignee: Hitachi High-Technologies CorporationInventors: Chie Shishido, Mayuka Iwasaki, Hiroki Kawada
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Publication number: 20070286494Abstract: Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.Type: ApplicationFiled: April 20, 2007Publication date: December 13, 2007Inventors: Chie Shishido, Mayuka Iwasaki, Hiroki Kawada
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Patent number: 7269287Abstract: Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.Type: GrantFiled: January 3, 2006Date of Patent: September 11, 2007Assignee: Hitachi High-Technologies CorporationInventors: Chie Shishido, Mayuka Iwasaki, Hiroki Kawada
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Publication number: 20070092130Abstract: Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.Type: ApplicationFiled: January 3, 2006Publication date: April 26, 2007Inventors: Chie Shishido, Mayuka Iwasaki, Hiroki Kawada